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NEC Electronics
UPD424256 - 256K x 4-Bit CMOD DRAM
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Mitsubishi
M5M4464P-12 - 256K-Bit DRAM
MITSUBISHI LSls MsM4464P-12, -15 262 144-BIT(65 536-WORD BY 4-BIT) DYNAMIC RAM DESCRIPTION This is family of 65536-word by 4-bit dynamic RAMs, fabric.
STMicroelectronics
29F200 - 2 Mbit 256Kb x8 or 128Kb x16 / Boot Block Single Supply Flash Memory
M29F200BT M29F200BB 2 Mbit (256Kb x8 or 128Kb x16, Boot Block) Single Supply Flash Memory PRELIMINARY DATA s SINGLE 5V±10% SUPPLY VOLTAGE for PROGRAM.
Fujitsu Media Devices
MB81C4256A - 256K x 4-Bit Fast Page Mode Low Power DRAM
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STMicroelectronics
27C4002 - 4 Mbit 256Kb x16 UV EPROM and OTP EPROM
M27C4002 4 Mbit (256Kb x16) UV EPROM and OTP EPROM 5V ± 10% SUPPLY VOLTAGE in READ OPERATION FAST ACCESS TIME: 45ns LOW POWER CONSUMPTION: – Active Cu.
Mitsubishi
M5M4256L-12 - 256K-Bit DRAM
MITSUBISHI LSls M5M4256L-12, -15, -20 262 144-BIT (262 144-WORDBY I-BIT) DYNAMIC RAM DESCRIPTION This is a family of 262 144-word by l-bit dynamic RA.
Mitsubishi
M5M4256P-12 - 256K-Bit DRAM
MITSUBISHI LSls M5M4256P-12, -15, -20 262 144-BIT (262 144-WORD BY I-BIT) DYNAMIC RAM DESCRIPTION This is a fami Iy of 262 144-word by 1-bit dynamic .
STMicroelectronics
M27C400 - 4 Mbit 512Kb x8 or 256Kb x16 UV EPROM and OTP EPROM
M27C400 4 Mbit (512Kb x8 or 256Kb x16) UV EPROM and OTP EPROM s 5V ± 10% SUPPLY VOLTAGE in READ OPERATION ACCESS TIME: 55ns BYTE-WIDE or WORD-WIDE CO.
S-MOS Systems
SRM20256LC12 - CMOS 256K-Bit Static RAM
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Mitsubishi
M5M4256L-15 - 256K-Bit DRAM
MITSUBISHI LSls M5M4256L-12, -15, -20 262 144-BIT (262 144-WORDBY I-BIT) DYNAMIC RAM DESCRIPTION This is a family of 262 144-word by l-bit dynamic RA.
Hynix Semiconductor
HY534256 - 256K x 4-Bit CMOS DRAM
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S-MOS Systems
SRM20256LM10 - CMOS 256K-Bit Static RAM
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Mitsubishi
M5M5256BFP-70L - 256K-Bit CMOS Sraric RAM
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Cypress
CY7C106D - 1-Mbit (256K x 4) Static RAM
CY7C106D CY7C1006D 1-Mbit (256 K × 4) Static RAM 1-Mbit (256 K × 4) Static RAM Features ■ Pin- and function-compatible with CY7C106B/CY7C1006B ■ High.
Hynix Semiconductor
HY29F400 - 4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory
HY29F400 4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory KEY FEATURES n 5 Volt Read, Program, and Erase – Minimizes system-level power requirement.
Hynix Semiconductor
HY534256S - 256K x 4-Bit CMOS DRAM
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Mitsubishi
M5M4464P-15 - 256K-Bit DRAM
MITSUBISHI LSls MsM4464P-12, -15 262 144-BIT(65 536-WORD BY 4-BIT) DYNAMIC RAM DESCRIPTION This is family of 65536-word by 4-bit dynamic RAMs, fabric.
