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MX29F002N - 2M-BIT[256K x 8]CMOS FLASH MEMORY

This page provides the datasheet information for the MX29F002N, a member of the MX29F002 2M-BIT[256K x 8]CMOS FLASH MEMORY family.

Datasheet Summary

Features

  • 262,144x 8 only.
  • Fast access time: 55/70/90/120ns.
  • Low power consumption - 30mA maximum active current(5MHz) - 1uA typical standby current.
  • Programming and erasing voltage 5V ± 10%.
  • Command register architecture - Byte Programming (7us typical) - Sector Erase (16K-Byte x1, 8K-Byte x 2, 32K-Byte x1, and 64K-Byte x 3).
  • Auto Erase (chip & sector) and Auto Program - Automatically erase any combination of sectors or the whole chip with Erase Susp.

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Datasheet preview – MX29F002N

Datasheet Details

Part number MX29F002N
Manufacturer Macronix
File Size 911.80 KB
Description 2M-BIT[256K x 8]CMOS FLASH MEMORY
Datasheet download datasheet MX29F002N Datasheet
Additional preview pages of the MX29F002N datasheet.

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Full PDF Text Transcription

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MX29F002/002N 2M-BIT [256K x 8] CMOS FLASH MEMORY FEATURES • 262,144x 8 only • Fast access time: 55/70/90/120ns • Low power consumption - 30mA maximum active current(5MHz) - 1uA typical standby current • Programming and erasing voltage 5V ± 10% • Command register architecture - Byte Programming (7us typical) - Sector Erase (16K-Byte x1, 8K-Byte x 2, 32K-Byte x1, and 64K-Byte x 3) • Auto Erase (chip & sector) and Auto Program - Automatically erase any combination of sectors or the whole chip with Erase Suspend capability. - Automatically programs and verifies data at specified address • Erase Suspend/Erase Resume - Suspends an erase operation to read data from, or program data to, a sector that is not being erased, then resumes the erase operation.
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