260-1260 Datasheet | Specifications & PDF Download

Ordering number : EN1506D Monolithic Linear IC LA1260 FM/AM Tuner System for Radio-Casette Recorders, Music Centers Functions FM : IF amplifier, qua

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P1260ATF N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 600V 0.65Ω @VGS = 10V ID 12A TO-220F ABSOLUTE MAXIMUM RATINGS (TA

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P1260AT N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 600V 0.65Ω @VGS = 10V 12A TO-220 ABSOLUTE MAXIMUM RATINGS (TA =

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307C1260BHLAB, 307C1260BHMAB Vishay Cera-Mite PTC Thermistors APPLICATION - STARTING IN ELECTRONIC FLUORESCENT BALLASTS STANDARD ELECTRICAL SPECIFICA

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DESCRIPITON VLA219-241260 is a non-isolated type DC-DC converter. HYBRID IC VLA219-241260 NON-ISOLATED TYPE DC-DC CONVERTER OUTLINE DRAWING Dimensi

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Power Transistor(-80V,-1A) FEATURES z High breakdown voltage and high current. BVCEO=-80V,IC=-1A z Good hFEVLinearity. z Low VCE(sat). z Complements

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www.DataSheet4U.net M61260BFP /M61262BFP /M61266FP 20 Evaluation Boards Peripheral Pre Amp. AV Switch PIP VCR LCD TV 1 Chip TV VIF/SIF App

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GGaiainn((ddBB)) EffEiffciicieennccyy((%%)) GTVA126001EC/FC Thermally-Enhanced High Power RF GaN HEMT 600 W, 50 V, DC – 1.4 GHz Description The GTVA1

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Web page Sample & buy Tools & software Support & FAQ Document 599-1 High Temp Power Inductors  MSS1260T • Designed for high ambient temperature

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307C1260BHLAB, 307C1260BHMAB Vishay Cera-Mite PTC Thermistors APPLICATION - STARTING IN ELECTRONIC FLUORESCENT BALLASTS STANDARD ELECTRICAL SPECIFICA

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www.DataSheet4U.com w w .D w t a S a e h U 4 t e .c m o www.DataSheet4U.com

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www.DataSheet4U.com DIOTEC ELECTRONICS CORP. 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: (310) 767-1052 Fax: (310) 767-7958 Data Sheet N

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www.DataSheet4U.net M61260BFP /M61262BFP /M61266FP 20 Evaluation Boards Peripheral Pre Amp. AV Switch PIP VCR LCD TV 1 Chip TV VIF/SIF App

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MUR1220CTR thru MUR1260CTR ® MUR1220CTR thru MUR1260CTR Pb Pb Free Plating Product 12.0 Ampere Heatsink Dual Common Anode Fast Recovery Rectifier

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*&RoAHESC-CQO2M0P0LQIUAANLTIFIED 470 Features ■ Shielded construction ■ Inductance range: 1 to 1000 µH ■ Heating current up to 9.4 A ■ AEC-Q200 qual

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2SB1260 / 2SB1181 PNP -1.0A -80V Middle Power Transistor Parameter VCEO IC Value -80V -1.0A lOutline MPT3 Base Collector Emitter lFeatures 1) Suit

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PIGoBwTerPoMwoedruMleodule 1200 V 600 A IGBT Module MG12600WB-BR2MM RoHS Features • Trench-gate field stop IGBT technology • Low saturation voltag

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Power Transistors 2SB937, 2SB937A Silicon PNP epitaxial planar type Darlington For power amplification and switching Complementary to 2SD1260 and 2SD

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Metal Alloy Inductors メタルアロイ®インダクタ FDUE1260 Inductance Range: 0.45H Recommended patterns パターン Tolerance：±0.3 (Unit: mm) (Unit: mm) FEATURES  14

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