260-1260 Datasheet | Specifications & PDF Download

Ordering number : EN1506D Monolithic Linear IC LA1260 FM/AM Tuner System for Radio-Casette Recorders, Music Centers Functions FM : IF amplifier, qua

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*&RoAHESC-CQO2M0P0LQIUAANLTIFIED 470 Features ■ Shielded construction ■ Inductance range: 1 to 1000 µH ■ Heating current up to 9.4 A ■ AEC-Q200 qual

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CHE1260-98F 10-27GHz Bidirectionnal Detector GaAs Monolithic Microwave IC Description The CHE1260-98F is a bidirectionnal detector that integrates a

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P1260ATF N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 600V 0.65Ω @VGS = 10V ID 12A TO-220F ABSOLUTE MAXIMUM RATINGS (TA

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http://www.ncepower.com Pb Free Product NCEP1260F NCE N-Channel Super Trench Power MOSFET Description The NCEP1260F uses Super Trench technology tha

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FD6010 SERIES 60x60x10mm Airflow: 17.3~23.3 CFM Static Pressure: 2.1~4.0 mm-H2O Blade / Housing: Plastic Material UL 94V-0 P.B.T. Lead Wire: UL1007 #

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FD6010 SERIES 60x60x10mm Airflow: 17.3~23.3 CFM Static Pressure: 2.1~4.0 mm-H2O Blade / Housing: Plastic Material UL 94V-0 P.B.T. Lead Wire: UL1007 #

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High Current Power Inductor - CSB1260 Series Outline: Magnetic shielded structure: excellent resistance to electro magnetic interference(EMI) Flat w

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GTVA126001EC/FC Thermally-Enhanced High Power RF GaN HEMT 600 W, 50 V, DC – 1.4 GHz Description The GTVA126001EC and GTVA126001FC are 600-watt GaN on

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FD6010 SERIES 60x60x10mm Airflow: 17.3~23.3 CFM Static Pressure: 2.1~4.0 mm-H2O Blade / Housing: Plastic Material UL 94V-0 P.B.T. Lead Wire: UL1007 #

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FEATURES AND BENEFITS • AEC-Q100 automotive qualified • Magnetic sensing parallel to package surface • Highly sensitive switch thresholds • Symmetrica

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P1260ETF / P1260ETFS N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 600V 670mΩ @VGS = 10V ID 12A TO-220F TO-220FS ABSOLUTE

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FD6010 SERIES 60x60x10mm Airflow: 17.3~23.3 CFM Static Pressure: 2.1~4.0 mm-H2O Blade / Housing: Plastic Material UL 94V-0 P.B.T. Lead Wire: UL1007 #

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Schottky Barrier Rectifier, Trench-based NRTS1260PFS, NRVTS1260PFS This TO−277 trench Schottky rectifier provides fast switching performance in a com

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High Current Power Inductor CSCM1260 Series Outline: Magnetic shielding structure, excellent resistance to electro magnetic interference. Flat wire co

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Power Transistor(-80V,-1A) FEATURES z High breakdown voltage and high current. BVCEO=-80V,IC=-1A z Good hFEVLinearity. z Low VCE(sat). z Complements

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SMD Type Power Transistor 2SB1260 Features High breakdown voltage and high current.BVCEO= -80V, IC=-1A Good hFE linearity. Low VCE(sat). Epitaxial p

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GTVA126001EC/FC Thermally-Enhanced High Power RF GaN HEMT 600 W, 50 V, DC – 1.4 GHz Description The GTVA126001EC and GTVA126001FC are 600-watt GaN on

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