2716 Datasheet | Specifications & PDF Download

www.DataSheet4U.com M2716 NMOS 16K (2K x 8) UV EPROM 2048 x 8 ORGANIZATION 525mW Max ACTIVE POWER, 132mW Max STANDBY POWER ACCESS TIME: – M2716-1 is

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IP2716 USB TYPE-C PD3.0、QC3.0/2.0/MTK High Voltage Charger Protocol Controller Feature  USB TYPE-C  Integrate TYPE-C DRP protocol  Auto detect TYP

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M2716 NMOS 16K (2K x 8) UV EPROM 2048 x 8 ORGANIZATION 525mW Max ACTIVE POWER, 132mW Max STANDBY POWER ACCESS TIME: – M2716-1 is 350ns – M2716 is 450n

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• • • • • • Very low LO requirement: -10dBm 34 dB Gain Control Range Excellent I/Q Amplitude and Phase Balance (±0.3 dB & ±2 Degrees respectively) Hi

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K4R271669A/K4R441869A Direct RDRAM™ 128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM Revision 1.02 January 2000 Page -1 R

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K4R271669E Direct RDRAM™ 128Mbit RDRAM(E-die) 256K x 16 bit x 32s Banks Direct RDRAMTM Version 1.4 July 2002 Page -1 Version 1.4 July 2002 K4R2

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DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA2716GR SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION The µ PA2716GR is P-Channel MOS Field Effect Transis

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File No. 406 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ __ D\lm5LJD Solid State Division T2306 T2316 T2706 T2806 T2716 T4106 T4107 T

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This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its R

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K4R271669F Direct RDRAM™ 128Mbit RDRAM(F-die) 256K x 16 bit x 32s Banks Direct RDRAMTM Version 1.41 January 2004 Page -1 Version 1.41 Jan. 2004

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