280W Datasheet | Specifications & PDF Download

RFHA1025 280W GaN Wideband Pulsed Power Amplifier RFHA1025 280W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2-Pin Features  Wide

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PROPRIETARY NOTE THIS SPECIFICATION IS THE PROPERTY OF BOE DT AND SHALL NOT BE REPRODUCED OR COPIED WITHOUT THE WRITTEN PERMISSION OF BOE DT AND MUST

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MPE-825A Industrial Power Supply 280W AC-DC ATX Power Supply 2.0 0.42 0.42 11.0 DC OUTPUT WIRES 14.4 AC-DC 15.0 0.5 13.80 4-TAPPING#6-32 6.4 2

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PROPRIETARY NOTE THIS SPECIFICATION IS THE PROPERTY OF BOE DT AND SHALL NOT BE REPRODUCED OR COPIED WITHOUT THE WRITTEN PERMISSION OF BOE DT AND MUST

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m o RB Modules .c U 4 t Applications e e h S a at Standards .D w w w Grounding and wiring integration devices for commercial/military aircraft. Descr

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RFHA1020 280W GaN WIDE-BAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2 Pin Features  Wideband Operation: 1.2GHz to 1.4GHz  Advanced GaN HEM

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AL081C280W TECHNICAL DATA High Power Linear Infrared Laser Diode Array Features • Output Power: 280 W • 780-830 nm Emission Wavelength • Spectral W

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BFR 280W NPN Silicon RF Transistor • For low noise, low-power amplifiers in mobile communication systems (pager, cordless telephone) at collector curr

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BFR280W NPN Silicon RF Transistor
For low noise, low-power amplifiers in mobile 3 communication systems (pager, cordless telephone) at collector c

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BFP 280W NPN Silicon RF Transistor • For low noise, low-power amplifiers in mobile communication systems (pager, cordless telephone) at collector curr

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280W Mini Hi-Fi System FWM462 -/55/77/BK � CONTENTS Technical specification 1-2 Ve

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Silicon Limiter Diodes Features • Low Insertion Loss and Noise Figure • High Peak and Average Operating Power • Various P1dB Compression Powers • Au D

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