Datasheet4U Logo Datasheet4U.com

RFHA1025

280W GaN WIDEBAND PULSED POWER AMPLIFIER

RFHA1025 Features

* Wideband Operation: 0.96GHz to 1.215GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Supports Multiple Pulse Conditions 10% to 20% Duty Cycle 100s to 1ms Pulse Width Integrated Matching Components for High Terminal Impedances

* RF IN VG Pin 1 (CUT

RFHA1025 General Description

The RFHA1025 is a 50V 280W high power discrete amplifier designed for L-band pulsed radar, air traffic control and surveillance and general purpose broadband amplifier applications. Using an advanced high power density gallium nitride (GaN) semiconductor process, these high performance amplifiers ac.

RFHA1025 Datasheet (939.76 KB)

Preview of RFHA1025 PDF

Datasheet Details

Part number:

RFHA1025

Manufacturer:

RFMD

File Size:

939.76 KB

Description:

280w gan wideband pulsed power amplifier.

📁 Related Datasheet

RFHA1020 280W GaN WIDE-BAND PULSED POWER AMPLIFIER (RF Micro Devices)

RFHA1023 225W GaN WIDE-BAND PULSED POWER AMPLIFIER (RF Micro Devices)

RFHA1000 15W GaN WIDE-BAND POWER AMPLIFIER (RF Micro Devices)

RFHA1003 9W GaN WIDEBAND (RF Micro Devices)

RFHA1006 9W GaN WIDEBAND POWER AMPLIFIER (RF Micro Devices)

RFH10N45 N-Channel Power MOSFET (Intersil Corporation)

RFH10N50 N-Channel Power MOSFET (Intersil Corporation)

RFH12N35 N-Channel Power MOSFET (Intersil Corporation)

RFH12N40 N-Channel Power MOSFET (Intersil Corporation)

RFH25P08 P-Channel Power MOSFET (Intersil Corporation)

TAGS

RFHA1025 280W GaN WIDEBAND PULSED POWER AMPLIFIER RFMD

Image Gallery

RFHA1025 Datasheet Preview Page 2 RFHA1025 Datasheet Preview Page 3

RFHA1025 Distributor