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RFH12N35, RFH12N40 Data Sheet October 1998 File Number 1630.2 12A, 350V and 400V, 0.380 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high-power bipolar switching transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated circuits.
Formerly developmental type
RFH12N35 Features
* 12A, 350V and 400V
* rDS(ON) = 0.380Ω
* Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D Ordering Information PART NUMBER RFH12N35 RFH12N40 PACKAGE TO-218AC TO-218AC BRAND RFH12N35 RFH12N40 G S NOTE: When ordering, us
RFH12N35_IntersilCorporation.pdf
Datasheet Details
RFH12N35
Intersil Corporation
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N-channel power mosfet.
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