RFH12N35 Datasheet - Intersil Corporation

RFH12N35 N-Channel Power MOSFET

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RFH12N35, RFH12N40 Data Sheet October 1998 File Number 1630.2 12A, 350V and 400V, 0.380 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power ﬁeld effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high-power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type .

RFH12N35 Features

* 12A, 350V and 400V

* rDS(ON) = 0.380Ω

* Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D Ordering Information PART NUMBER RFH12N35 RFH12N40 PACKAGE TO-218AC TO-218AC BRAND RFH12N35 RFH12N40 G S NOTE: When ordering, us

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