Datasheet4U Logo Datasheet4U.com

RFHA1023

225W GaN WIDE-BAND PULSED POWER AMPLIFIER

RFHA1023 Features

* Wideband Operation: 1.2GHz to 1.4GHz Advanced GaN HEMT Technology Advanced Heat Sink Technology Optimized Evaluation Board Layout for 50 : Operation Integrated Matching Components for High Terminal Impedances 36V Operation Typical Per

RFHA1023 General Description

The RFHA1023 is a 36V 225W high power discrete amplifier designed for L-Band pulsed radar, Air Traffic Control and Surveillance and general purpose broadband amplifier applications. Using an advanced high power density Gallium Nitride (GaN) semiconductor process, these high performance amplifiers ac.

RFHA1023 Datasheet (347.67 KB)

Preview of RFHA1023 PDF

Datasheet Details

Part number:

RFHA1023

Manufacturer:

RF Micro Devices

File Size:

347.67 KB

Description:

225w gan wide-band pulsed power amplifier.

📁 Related Datasheet

RFHA1020 280W GaN WIDE-BAND PULSED POWER AMPLIFIER (RF Micro Devices)

RFHA1025 280W GaN WIDEBAND PULSED POWER AMPLIFIER (RFMD)

RFHA1000 15W GaN WIDE-BAND POWER AMPLIFIER (RF Micro Devices)

RFHA1003 9W GaN WIDEBAND (RF Micro Devices)

RFHA1006 9W GaN WIDEBAND POWER AMPLIFIER (RF Micro Devices)

RFH10N45 N-Channel Power MOSFET (Intersil Corporation)

RFH10N50 N-Channel Power MOSFET (Intersil Corporation)

RFH12N35 N-Channel Power MOSFET (Intersil Corporation)

RFH12N40 N-Channel Power MOSFET (Intersil Corporation)

RFH25P08 P-Channel Power MOSFET (Intersil Corporation)

TAGS

RFHA1023 225W GaN WIDE-BAND PULSED POWER AMPLIFIER RF Micro Devices

Image Gallery

RFHA1023 Datasheet Preview Page 2 RFHA1023 Datasheet Preview Page 3

RFHA1023 Distributor