RFHA1003 Datasheet - RF Micro Devices

RFHA1003 - 9W GaN WIDEBAND

The RFHA1003 is a wideband Power Amplifier designed for CW and pulsed applications such as wireless infrastructure, RADAR, two way radios and general purpose amplification. Using an advanced high power density Gallium Nitride (GaN) semiconductor process, these high-performance amplifiers achieve hig.

RFHA1003 Features

* VGS Pin 1 Advanced GaN HEMT Technology Output Power of 9W Advanced Heat-Sink Technology 30MHz to 512MHz Instantaneous Bandwidth Input Internally Matched to 50 28V Operation Typical Performance Output Power 39.5dBm Gain 19dB

* Power Added Efficiency 70% -40°C to 85°C Op

RFHA1003_RFMicroDevices.pdf