RFHA1003 - 9W GaN WIDEBAND

RF Micro Devices

RFHA1003 Datasheet Preview — Preview of RFHA1003 PDF

Datasheet Details

Part number	RFHA1003
Manufacturer	RF Micro Devices
File Size	1.12 MB
Description	9W GaN WIDEBAND
Datasheet	RFHA1003_RFMicroDevices.pdf

RFHA1003 Product details

Description

The RFHA1003 is a wideband Power Amplifier designed for CW and pulsed applications such as wireless infrastructure, RADAR, two way radios and general purpose amplification.

Features

VGS Pin 1 Advanced GaN HEMT Technology Output Power of 9W Advanced Heat-Sink Technology 30MHz to 512MHz Instantaneous Bandwidth Input Internally Matched to 50 28V Operation Typical Performance Output Power 39.5dBm Gain 19dB.
Power Added Efficiency 70% -40°C to 85°C Operating Temperature.
RF IN Pin 2,3 RF OUT / VDS Pin 6,7.
GND BASE Functional Block Diagram.
Product.

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Other Datasheets by RF Micro Devices

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Published: Nov 1, 2012 |