Datasheet4U Logo Datasheet4U.com

RFHA1003 Datasheet - RF Micro Devices

RFHA1003 9W GaN WIDEBAND

The RFHA1003 is a wideband Power Amplifier designed for CW and pulsed applications such as wireless infrastructure, RADAR, two way radios and general purpose amplification. Using an advanced high power density Gallium Nitride (GaN) semiconductor process, these high-performance amplifiers achieve hig.

RFHA1003 Features

* VGS Pin 1 Advanced GaN HEMT Technology Output Power of 9W Advanced Heat-Sink Technology 30MHz to 512MHz Instantaneous Bandwidth Input Internally Matched to 50 28V Operation Typical Performance Output Power 39.5dBm Gain 19dB

* Power Added Efficiency 70% -40°C to 85°C Op

RFHA1003 Datasheet (1.12 MB)

Preview of RFHA1003 PDF

Datasheet Details

Part number:

RFHA1003

Manufacturer:

RF Micro Devices

File Size:

1.12 MB

Description:

9w gan wideband.

📁 Related Datasheet

RFHA1000 15W GaN WIDE-BAND POWER AMPLIFIER (RF Micro Devices)

RFHA1006 9W GaN WIDEBAND POWER AMPLIFIER (RF Micro Devices)

RFHA1020 280W GaN WIDE-BAND PULSED POWER AMPLIFIER (RF Micro Devices)

RFHA1023 225W GaN WIDE-BAND PULSED POWER AMPLIFIER (RF Micro Devices)

RFHA1025 280W GaN WIDEBAND PULSED POWER AMPLIFIER (RFMD)

RFH10N45 N-Channel Power MOSFET (Intersil Corporation)

RFH10N50 N-Channel Power MOSFET (Intersil Corporation)

RFH12N35 N-Channel Power MOSFET (Intersil Corporation)

RFH12N40 N-Channel Power MOSFET (Intersil Corporation)

RFH25P08 P-Channel Power MOSFET (Intersil Corporation)

TAGS

RFHA1003 GaN WIDEBAND RF Micro Devices

Image Gallery

RFHA1003 Datasheet Preview Page 2 RFHA1003 Datasheet Preview Page 3

RFHA1003 Distributor