RFHA1000 Datasheet - RF Micro Devices

RFHA1000, 15W GaN WIDE-BAND POWER AMPLIFIER

www.DataSheet.co.kr RFHA1000 50MHz to 1000MHz, 15 W GaN Wideband Power Amplifier RFHA1000 50MHz TO 1000MHz, 15W GaN WIDEBAND POWER AMPLIFIER Package.
The RFHA1000 is a wideband Power Amplifier designed for CW and pulsed applications such as wireless infrastructure, RADAR, two way radios and general.

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RFHA1000_RFMicroDevices.pdf

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Datasheet Details

Part number:

RFHA1000

Manufacturer:

RF Micro Devices

File Size:

976.08 KB

Description:

15W GaN WIDE-BAND POWER AMPLIFIER

Features

* VGS Pin 1 Advanced GaN HEMT Technology Output Power of 15W Advanced Heat-Sink Technology 50MHz to 1000MHz Instantaneous Bandwidth Input Internally Matched to 50  28V Operation Typical Performance Output Power 41.5dBm Gain 17dB
* Power Added Efficiency 60% -40°C to 85°C

Applications

* such as wireless infrastructure, RADAR, two way radios and general purpose amplification. Using an advanced high power density Gallium Nitride (GaN) semiconductor process, these high-performance amplifiers achieve high efficiency, flat gain, and large instantaneous bandwidth in a single amplifier de

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RFHA1000 15W GaN WIDE-BAND POWER AMPLIFIER RF Micro Devices

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