RFHA1020 - 280W GaN WIDE-BAND PULSED POWER AMPLIFIER

RF Micro Devices

RFHA1020 Datasheet Preview — Preview of RFHA1020 PDF

Datasheet Details

Part number	RFHA1020
Manufacturer	RF Micro Devices
File Size	744.84 KB
Description	280W GaN WIDE-BAND PULSED POWER AMPLIFIER
Datasheet	RFHA1020_RFMicroDevices.pdf

RFHA1020 Product details

Description

The RFHA1020 is a 50V 280W high power discrete amplifier designed for L-band pulsed radar, air traffic control and surveillance and general purpose broadband amplifier applications.

Features

Wideband Operation: 1.2GHz to 1.4GHz.
Advanced GaN HEMT Technology.
Advanced Heat-Sink Technology.
Supports Multiple Pulse Conditions.
10% to 20% Duty Cycle.
100s to 1ms Pulse Width.
Integrated Matching Components for High Terminal Impedances.
50V Operation Typical Performance:.
Output Pulsed Power: 280W.
Pulse Width: 100s, Duty Cycle 10%.
Small Signal Gain: 15dB.
High Efficiency (55%).
- 40°C to 85°C Operating Temperature RF I.

📁 RFHA1020 Similar Datasheet

RFHA1025 - 280W GaN WIDEBAND PULSED POWER AMPLIFIER (RFMD)
RFH10N45 - N-Channel Power MOSFET (Intersil Corporation)
RFH10N50 - N-Channel Power MOSFET (Intersil Corporation)
RFH12N35 - N-Channel Power MOSFET (Intersil Corporation)
RFH12N40 - N-Channel Power MOSFET (Intersil Corporation)
RFH25P08 - P-Channel Power MOSFET (Intersil Corporation)
RFH25P10 - P-Channel Power MOSFET (Intersil Corporation)
RFH45N05 - (RFH45N05 / RFH45N06) POWER MOS FIELD EFFECT TRANSISTORS (General Electric Solid State)

Other Datasheets by RF Micro Devices

RFHA1023 - 225W GaN WIDE-BAND PULSED POWER AMPLIFIER
RFHA1000 - 15W GaN WIDE-BAND POWER AMPLIFIER
RFHA1003 - 9W GaN WIDEBAND
RFHA1006 - 9W GaN WIDEBAND POWER AMPLIFIER

Published: Nov 5, 2011 |