Part number:
RFHA1020
Manufacturer:
RF Micro Devices
File Size:
744.84 KB
Description:
280w gan wide-band pulsed power amplifier.
* Wideband Operation: 1.2GHz to 1.4GHz
* Advanced GaN HEMT Technology
* Advanced Heat-Sink Technology
* Supports Multiple Pulse Conditions
* 10% to 20% Duty Cycle
* 100s to 1ms Pulse Width
* Integrated Matching Components for High Terminal Impedances
* 50V Operation
RFHA1020 Datasheet (744.84 KB)
RFHA1020
RF Micro Devices
744.84 KB
280w gan wide-band pulsed power amplifier.
📁 Related Datasheet
RFHA1023 225W GaN WIDE-BAND PULSED POWER AMPLIFIER (RF Micro Devices)
RFHA1025 280W GaN WIDEBAND PULSED POWER AMPLIFIER (RFMD)
RFHA1000 15W GaN WIDE-BAND POWER AMPLIFIER (RF Micro Devices)
RFHA1003 9W GaN WIDEBAND (RF Micro Devices)
RFHA1006 9W GaN WIDEBAND POWER AMPLIFIER (RF Micro Devices)
RFH10N45 N-Channel Power MOSFET (Intersil Corporation)
RFH10N50 N-Channel Power MOSFET (Intersil Corporation)
RFH12N35 N-Channel Power MOSFET (Intersil Corporation)
RFH12N40 N-Channel Power MOSFET (Intersil Corporation)
RFH25P08 P-Channel Power MOSFET (Intersil Corporation)