RFHA1020 Datasheet - RF Micro Devices

RFHA1020, 280W GaN WIDE-BAND PULSED POWER AMPLIFIER

RFHA1020 280W GaN WIDE-BAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2 Pin .
The RFHA1020 is a 50V 280W high power discrete amplifier designed for L-band pulsed radar, air traffic control and surveillance and general purpose br.

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Datasheet Details

Part number:

RFHA1020

Manufacturer:

RF Micro Devices

File Size:

744.84 KB

Description:

280W GaN WIDE-BAND PULSED POWER AMPLIFIER

Features

* Wideband Operation: 1.2GHz to 1.4GHz
* Advanced GaN HEMT Technology
* Advanced Heat-Sink Technology
* Supports Multiple Pulse Conditions
* 10% to 20% Duty Cycle
* 100s to 1ms Pulse Width
* Integrated Matching Components for High Terminal Impedances
* 50V Operation

Applications

* Using an advanced high power density Gallium Nitride (GaN) semiconductor process, these high performance amplifiers achieve high output power, high efficiency, and flat gain over a broad frequency range in a single package. The RFHA1020 is a matched power transistor packaged in a hermetic, flanged

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RFHA1020 280W GaN WIDE-BAND PULSED POWER AMPLIFIER RF Micro Devices

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