Part number:
RFHA1006
Manufacturer:
RF Micro Devices
File Size:
1.66 MB
Description:
9w gan wideband power amplifier.
Datasheet Details
The RFHA1006 is a wideband Power Amplifier designed for CW and pulsed applications such as wireless infrastructure, RADAR, two way radios and general purpose amplification.
Using an advanced high power density Gallium Nitride (GaN) semiconductor process, these high-performance amplifiers achieve hig
RFHA1006 Features
* VGS Pin 1 Advanced GaN HEMT Technology Output Power of 9W Advanced Heat-Sink Technology 225MHz to 1215MHz Instantaneous Bandwidth Input Internally Matched to 50 28V Operation Typical Performance Output Power 39.5dBm Gain 16dB
* Power Added Efficiency 60% -40°C to 85°C
Datasheet Details
RFHA1006
RF Micro Devices
1.66 MB
9w gan wideband power amplifier.
📁 Related Datasheet
📌 All Tags