Datasheet4U Logo Datasheet4U.com

RFHA1006 Datasheet - RF Micro Devices

RFHA1006 9W GaN WIDEBAND POWER AMPLIFIER

The RFHA1006 is a wideband Power Amplifier designed for CW and pulsed applications such as wireless infrastructure, RADAR, two way radios and general purpose amplification. Using an advanced high power density Gallium Nitride (GaN) semiconductor process, these high-performance amplifiers achieve hig.

RFHA1006 Features

* VGS Pin 1 Advanced GaN HEMT Technology Output Power of 9W Advanced Heat-Sink Technology 225MHz to 1215MHz Instantaneous Bandwidth Input Internally Matched to 50 28V Operation Typical Performance Output Power 39.5dBm Gain 16dB

* Power Added Efficiency 60% -40°C to 85°C

RFHA1006_RFMicroDevices.pdf

Preview of RFHA1006 PDF
RFHA1006 Datasheet Preview Page 2 RFHA1006 Datasheet Preview Page 3

Datasheet Details

Part number:

RFHA1006

Manufacturer:

RF Micro Devices

File Size:

1.66 MB

Description:

9w gan wideband power amplifier.

📁 Related Datasheet

RFHA1000 15W GaN WIDE-BAND POWER AMPLIFIER (RF Micro Devices)

RFHA1003 9W GaN WIDEBAND (RF Micro Devices)

RFHA1020 280W GaN WIDE-BAND PULSED POWER AMPLIFIER (RF Micro Devices)

RFHA1023 225W GaN WIDE-BAND PULSED POWER AMPLIFIER (RF Micro Devices)

RFHA1025 280W GaN WIDEBAND PULSED POWER AMPLIFIER (RFMD)

RFH10N45 N-Channel Power MOSFET (Intersil Corporation)

RFH10N50 N-Channel Power MOSFET (Intersil Corporation)

RFH12N35 N-Channel Power MOSFET (Intersil Corporation)

TAGS

RFHA1006 RFHA1006 GaN WIDEBAND POWER AMPLIFIER RF Micro Devices

RFHA1006 Distributor