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RFHA1006 Datasheet - RF Micro Devices

RFHA1006 9W GaN WIDEBAND POWER AMPLIFIER

The RFHA1006 is a wideband Power Amplifier designed for CW and pulsed applications such as wireless infrastructure, RADAR, two way radios and general purpose amplification. Using an advanced high power density Gallium Nitride (GaN) semiconductor process, these high-performance amplifiers achieve hig.

RFHA1006 Features

* VGS Pin 1 Advanced GaN HEMT Technology Output Power of 9W Advanced Heat-Sink Technology 225MHz to 1215MHz Instantaneous Bandwidth Input Internally Matched to 50 28V Operation Typical Performance Output Power 39.5dBm Gain 16dB

* Power Added Efficiency 60% -40°C to 85°C

RFHA1006 Datasheet (1.66 MB)

Preview of RFHA1006 PDF

Datasheet Details

Part number:

RFHA1006

Manufacturer:

RF Micro Devices

File Size:

1.66 MB

Description:

9w gan wideband power amplifier.

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RFHA1006 GaN WIDEBAND POWER AMPLIFIER RF Micro Devices

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