RFHA1006 - 9W GaN WIDEBAND POWER AMPLIFIER

RF Micro Devices

RFHA1006 Datasheet Preview — Preview of RFHA1006 PDF

Datasheet Details

Part number	RFHA1006
Manufacturer	RF Micro Devices
File Size	1.66 MB
Description	9W GaN WIDEBAND POWER AMPLIFIER
Datasheet	RFHA1006_RFMicroDevices.pdf

RFHA1006 Product details

Description

The RFHA1006 is a wideband Power Amplifier designed for CW and pulsed applications such as wireless infrastructure, RADAR, two way radios and general purpose amplification.

Features

VGS Pin 1 Advanced GaN HEMT Technology Output Power of 9W Advanced Heat-Sink Technology 225MHz to 1215MHz Instantaneous Bandwidth Input Internally Matched to 50 28V Operation Typical Performance Output Power 39.5dBm Gain 16dB.
Power Added Efficiency 60% -40°C to 85°C Operating Temperature.
RF IN Pin 2,3 RF OUT / VDS Pin 6,7.
GND BASE Functional Block Diagram.
Product.

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Published: Jun 14, 2012 |