28c64 Datasheet | Specifications & PDF Download

M28C64C M28C64X 64 Kbit (8Kb x8) Parallel EEPROM FAST ACCESS TIME: 150ns SINGLE 5V ± 10% SUPPLY VOLTAGE LOW POWER CONSUMPTION FAST WRITE CYCLE – 32 B

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Features • Fast Read Access Time – 120 ns • Fast Byte Write – 200 µs or 1 ms • Self-timed Byte Write Cycle – Internal Address and Data Latches – Inter

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Features • Fast Read Access Time – 150 ns • Automatic Page Write Operation – Internal Address and Data Latches for 64 Bytes • Fast Write Cycle Times –

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M28C64C M28C64X 64 Kbit (8Kb x8) Parallel EEPROM FAST ACCESS TIME: 150ns SINGLE 5V ± 10% SUPPLY VOLTAGE LOW POWER CONSUMPTION FAST WRITE CYCLE – 32 B

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X28C64 64K X28C64 8K x 8 Bit 5 Volt, Byte Alterable E2PROM FEATURES • 150ns Access Time • Simple Byte and Page Write —Single 5V Supply —No Extern

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Features • Fast Read Access Time – 120 ns • Fast Byte Write – 200 µs • Self-timed Byte Write Cycle – Internal Address and Data Latches – Internal Cont

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64-Kbit (8K x 8) Industrial Parallel EEPROM with Page Write and Software Data Protection AT28C64B Features • Fast Read Access Time: 150 ns • Automatic

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Features • Fast Read Access Time – 120 ns • Fast Byte Write – 200 µs or 1 ms • Self-timed Byte Write Cycle – Internal Address and Data Latches – Inter

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M28C64 64 Kbit (8K x 8) Parallel EEPROM With Software Data Protection NOT FOR NEW DESIGN s Fast Access Time: – 90 ns at VCC=5 V for M28C64 and M28C64

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ADVANCE‡ 4 MEG x 16 ASYNCHRONOUS/PAGE FLASH 512K x 16 SRAM COMBO MEMORY FLASH AND SRAM COMBO MEMORY FEATURES • Flexible dual-bank architecture • Sup

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Features • Fast Read Access Time – 120 ns • Fast Byte Write – 200 µs or 1 ms • Self-timed Byte Write Cycle – Internal Address and Data Latches – Inter

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Obsolete Device 28C64A 64K (8K x 8) CMOS EEPROM FEATURES • Fast Read Access Time—150 ns • CMOS Technology for Low Power Dissipation - 30 mA Active -

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Features • Fast Read Access Time – 150 ns • Automatic Page Write Operation – Internal Address and Data Latches for 64 Bytes • Fast Write Cycle Times –

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X28C64 64K X28C64 8K x 8 Bit 5 Volt, Byte Alterable E2PROM FEATURES • 150ns Access Time • Simple Byte and Page Write —Single 5V Supply —No Extern

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ADVANCE‡ 4 MEG x 16 ASYNCHRONOUS/PAGE FLASH 512K x 16 SRAM COMBO MEMORY FLASH AND SRAM COMBO MEMORY FEATURES • Flexible dual-bank architecture • Sup

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CAT28C64B 64K-Bit CMOS PARALLEL EEPROM FEATURES I Fast read access times: – 90/120/150ns I Low power CMOS dissipation: – Active: 25 mA max. – Standby:

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FEATURES Access Times of 150, 200, 250 and 350ns Single 5V±10% Power Supply Fast Byte Write (200µs or 1 ms) Low Power CMOS: - 60 mA Active Cur

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PYX28C64 8K x 8 EEPROM FEATURES Access Times of 200, 250, 300 and 350 ns Single 5V±10% Power Supply Simple Byte and Page Write Low Power CMOS: - 60 m

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