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HY27US(08/16)561A Series HY27SS(08/16)561A Series 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash Document Title 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash

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K3N5V(U)1000F-D(G)C 16M-Bit (2Mx8 /1Mx16) CMOS MASK ROM FEATURES • Switchable organization 2,097,152 x 8(byte mode) 1,048,576 x 16(word mode) • Fast a

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AC23C16200B Description 1MX16/2MX8 BIT CMOS MASK ROM The AC23C16200B high performance read only memory is organized either as 2,097,152 x 8 bit (byt

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1 HY27UF(08/16)4G2B Series 4Gbit (512Mx8bit) NAND Flash 4Gb NAND FLASH HY27UF(08/16)4G2B www.DataSheet4U.com This document is a general product desc

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HY27US(08/16)561A Series HY27SS(08/16)561A Series 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash Document Title 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash

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MX26LV160AT/AB Macronix NBit TM Memory Family 16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY BOOT SECTOR HIGH SPEED eLiteFlashTM MEMORY FEATURES • E

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MX29LV160C T/B 16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES • Extended single - supply voltage range 2.7V to 3.6V • 2,097,15

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MX29LV160T/B & MX29LV160AT/AB 16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES • Extended single - supply voltage range 2.7V to

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MX29LV160T/B & MX29LV160AT/AB 16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES • Extended single - supply voltage range 2.7V to

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MX29LV160T/B & MX29LV160AT/AB 16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES • Extended single - supply voltage range 2.7V to

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K4S160822D CMOS SDRAM 2Mx8 SDRAM 1M x 8bit x 2 Banks Synchronous DRAM LVTTL Revision 1.0 October 1999 Samsung Electronics reserves the right to ch

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HY27SS(08/16)561M Series HY27US(08/16)561M Series 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash Document Title 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash M

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HY27US(08/16)561A Series HY27SS(08/16)561A Series 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash Document Title 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash

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K3N5V(U)1000F-D(G)C 16M-Bit (2Mx8 /1Mx16) CMOS MASK ROM FEATURES • Switchable organization 2,097,152 x 8(byte mode) 1,048,576 x 16(word mode) • Fast a

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M-Densus High Density Memory Device 256 Megabit CMOS 3.3V EDO DRAM DP3ED32MX8RY5 DESCRIPTION: The M-Densus series is a family of interchangeable mem

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R MX29LV160BT/BB 16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES • Extended single - supply voltage range 2.7V to 3.6V • 2,0

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www.DataSheet4U.com FUJITSU SEMICONDUCTOR DATA SHEET DS05-20880-1E FLASH MEMORY CMOS 16M (2M × 8/1M × 16) BIT MBM29DL16XTE/BE -70/90/12 s FEATURES

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www.DataSheet4U.com FUJITSU SEMICONDUCTOR DATA SHEET DS05-20880-1E FLASH MEMORY CMOS 16M (2M × 8/1M × 16) BIT MBM29DL16XTE/BE -70/90/12 s FEATURES

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HY27SS(08/16)561M Series HY27US(08/16)561M Series 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash Document Title 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash M

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HY27US(08/16)561A Series HY27SS(08/16)561A Series 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash Document Title 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash

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