K3N5V1000F-DGC, K3N5V1000F-DC - 16M-Bit (2Mx8 / 1Mx16) CMOS Mask ROM

Samsung Semiconductor

The K3N5V1000F-DGC by Samsung Semiconductor is a 16M-Bit (2Mx8 / 1Mx16) CMOS Mask ROM. Below is the official datasheet preview.

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K3N5V1000F-DGC 16M-Bit (2Mx8 / 1Mx16) CMOS Mask ROM by Samsung Semiconductor - Datasheet Preview — Official preview page of the **K3N5V1000F-DGC** 16M-Bit (2Mx8 / 1Mx16) CMOS Mask ROM datasheet (Samsung Semiconductor).

Datasheet Details

Part number	K3N5V1000F-DGC, K3N5V1000F-DC
Manufacturer	Samsung Semiconductor
File Size	67.02 KB
Description	16M-Bit (2Mx8 / 1Mx16) CMOS Mask ROM
Datasheet	K3N5V1000F-DC_SamsungSemiconductor.pdf
Note	This datasheet PDF includes multiple part numbers: K3N5V1000F-DGC, K3N5V1000F-DC. Please refer to the document for exact specifications by model.
Additional preview pages of the K3N5V1000F-DGC datasheet.

K3N5V1000F-DGC Product details

Description

The K3N5V(U)1000F-D(G)C is a fully static mask programmable ROM fabricated using silicon gate CMOS process technology, and is organized either as 2,097,152 x 8 bit(byte mode) or as 1,048,576x16 bit(word mode) depending on BHE voltage level.(See mode selection table) This device operates with 3.0V or 3.3V power supply, and all inputs and outputs are TTL compatible.

Features

Switchable organization 2,097,152 x 8(byte mode) 1,048,576 x 16(word mode).
Fast access time 3.3V Operation : 100ns(Max. )@CL=50pF, 120ns(Max. )@CL=100pF 3.0V Operation : 120ns(Max. )@CL=100pF.
Supply voltage : single +3.0V/single +3.3V www. DataSheet4U. com.
Current consumption Operating : 40mA(Max. ) Standby : 30µA(Max. ).
Fully static operation.
All inputs and outputs TTL compatible.
Three state outputs.
Package -. K3N5V(U)1000.

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Other Datasheets by Samsung Semiconductor

K3N5V1000F-DC - 16M-Bit (2Mx8 / 1Mx16) CMOS Mask ROM
K3N5V1000D-TC - 16M-Bit (2M X 8 / 1M X 16) CMOS Mask ROM
K3N5VU1000D-TC - 16M-Bit (2M X 8 / 1M X 16) CMOS Mask ROM
K3N5VU1000F-DC - 16M-Bit (2Mx8 / 1Mx16) CMOS Mask ROM
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Published: Dec 9, 2008 |