K3N4C1000D-DC Datasheet (Samsung Electronics)

K3N4C1000D-DC, 8M-Bit CMOS Mask ROM

The K3N4C1000D-D(G)C is a fully static mask programmable ROM fabricated using silicon gate CMOS process technology, and is organized either as 1,048,576 x 8 bit(byte mode) or as 524,288 x16 bit(word mode) depending on BHE voltage level.

(See mode selection table) This device operates with a 5V singl

K3N4C1000D-DC Features

* Switchable organization 1,048,576 x 8(byte mode) 524,288 x 16(word mode)

* Fast access time : 100ns(Max.)

* Supply voltage : single +5V

* Current consumption Operating : 50mA(Max.) Standby : 50µA(Max.)

* Fully static operation

* All inputs and output