K3N4C1000D-DC_SamsungElectronics.pdf
Datasheet Details
Part number:
K3N4C1000D-GC, K3N4C1000D-DC
Manufacturer:
Samsung Electronics
File Size:
61.69 KB
Description:
8m-bit cmos mask rom.
Note:
This datasheet PDF includes multiple part numbers: K3N4C1000D-GC, K3N4C1000D-DC.
Please refer to the document for exact specifications by model.
K3N4C1000D-GC, K3N4C1000D-DC, 8M-Bit CMOS Mask ROM
The K3N4C1000D-D(G)C is a fully static mask programmable ROM fabricated using silicon gate CMOS process technology, and is organized either as 1,048,576 x 8 bit(byte mode) or as 524,288 x16 bit(word mode) depending on BHE voltage level.
(See mode selection table) This device operates with a 5V singl
K3N4C1000D-GC Features
* Switchable organization 1,048,576 x 8(byte mode) 524,288 x 16(word mode)
* Fast access time : 100ns(Max.)
* Supply voltage : single +5V
* Current consumption Operating : 50mA(Max.) Standby : 50µA(Max.)
* Fully static operation
* All inputs and output
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