K3N5V1000D-TC Datasheet (Samsung Semiconductor) - 16M-Bit (2M X 8 / 1M X 16) CMOS Mask ROM

K3N5V1000D-TC, 16M-Bit (2M X 8 / 1M X 16) CMOS Mask ROM

The K3N5V(U)1000D-TC is a fully static mask programmable ROM fabricated using silicon gate CMOS process technology, and is organized either as 2,097,152x8 bit(byte mode) or as 1,048,576x16 bit(word mode) depending on BHE voltage level.(See mode selection table) This device operates with 3.0V or 3.3V

K3N5V1000D-TC Features

* Switchable organization 2,097,152 x 8(byte mode) 1,048,576 x 16(word mode)

* Fast access time : 100ns(Max.)

* Supply voltage : single +3.0V/ single +3.3V

* Current consumption Operating : 40mA(Max.) Standby : 30µA(Max.)

* Fully static operation

* All