K3N5V1000D-TC_SamsungSemiconductor.pdf
Datasheet Details
Part number:
K3N5VU1000D-TC, K3N5V1000D-TC
Manufacturer:
Samsung Semiconductor
File Size:
81.04 KB
Description:
16m-bit (2m x 8 / 1m x 16) cmos mask rom.
Note:
This datasheet PDF includes multiple part numbers: K3N5VU1000D-TC, K3N5V1000D-TC.
Please refer to the document for exact specifications by model.
K3N5VU1000D-TC, K3N5V1000D-TC, 16M-Bit (2M X 8 / 1M X 16) CMOS Mask ROM
The K3N5V(U)1000D-TC is a fully static mask programmable ROM fabricated using silicon gate CMOS process technology, and is organized either as 2,097,152x8 bit(byte mode) or as 1,048,576x16 bit(word mode) depending on BHE voltage level.(See mode selection table) This device operates with 3.0V or 3.3V
K3N5VU1000D-TC Features
* Switchable organization 2,097,152 x 8(byte mode) 1,048,576 x 16(word mode)
* Fast access time : 100ns(Max.)
* Supply voltage : single +3.0V/ single +3.3V
* Current consumption Operating : 40mA(Max.) Standby : 30µA(Max.)
* Fully static operation
* All
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