K3N5V1000F-DC Datasheet - Samsung Semiconductor

K3N5V1000F-DC 16M-Bit (2Mx8 / 1Mx16) CMOS Mask ROM

The K3N5V(U)1000F-D(G)C is a fully static mask programmable ROM fabricated using silicon gate CMOS process technology, and is organized either as 2,097,152 x 8 bit(byte mode) or as 1,048,576x16 bit(word mode) depending on BHE voltage level.(See mode selection table) This device operates with 3.0V or.

K3N5V1000F-DC Features

* Switchable organization 2,097,152 x 8(byte mode) 1,048,576 x 16(word mode)

* Fast access time 3.3V Operation : 100ns(Max.)@CL=50pF, 120ns(Max.)@CL=100pF 3.0V Operation : 120ns(Max.)@CL=100pF

* Supply voltage : single +3.0V/single +3.3V www.DataSheet4U.com

* Current

K3N5V1000F-DC_SamsungSemiconductor.pdf