K3N4C1000D-TC Datasheet (Samsung Electronics)

K3N4C1000D-TC, 8M-Bit CMOS Mask ROM

The K3N4C1000D-TC(E) is a fully static mask programmable ROM fabricated using silicon gate CMOS process technology, and is organized either as 1,048,576 x8 bit(byte mode) or as 524,288 x16 bit(word mode) depending on BHE voltage level.(See mode selection table) This device operates with a 5V single

K3N4C1000D-TC Features

* Switchable organization 1,048,5762 x 8(byte mode) 524,288 x 16(word mode)

* Fast access time : 100ns(Max.)

* Supply voltage : single +5V

* Current consumption Operating : 50mA(Max.) Standby : 50µA(Max.)

* Fully static operation

* All inputs and outpu