2N15 Datasheet | Specifications & PDF Download

() CRST052N15N3Z, CRSS049N15N3Z SkyMOS3 N-MOSFET 150V, 4mΩ, 160A Features • Uses CRM(CQ) advanced SkyMOS3 technology • Extremely low on-resistance R

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Trench Gate Power MOSFET HiperFETTM N-Channel Enhancement Mode Avalanche Rated IXFA102N15T IXFH102N15T IXFP102N15T VDSS ID25 RDS(on) trr = 150V =

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 2N15 ·FEATURES ·Drain Current ID= 2A@ TC=25℃ ·Drain Source Voltage-

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Trench Gate Power MOSFETs N-Channel Enhancement Mode Avalanche Rated IXTA102N15T IXTH102N15T IXTP102N15T IXTQ102N15T TO-263 (IXTA) TO-247 (IXTH) T

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IPB072N15N3 G IPP075N15N3 G IPI075N15N3 G %&$ #™3 Power-Transistor Features Q' 3 81>>5< >? B=1<<5F5< Q H3 5<<5>D71D5 3 81B75 HR 9H [Z# @B? 4E3 D

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MOSFET - N-Channel Shielded Gate PowerTrench[ 150 V, 22 mW, 41.9 A NTMFS022N15MC Features • Small Footprint (5 x 6 mm) for Compact Design • Low RDS(

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Trench Gate Power MOSFETs N-Channel Enhancement Mode Avalanche Rated IXTA102N15T IXTH102N15T IXTP102N15T IXTQ102N15T TO-263 (IXTA) TO-247 (IXTH) T

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PD - 94357A SMPS MOSFET IRFB52N15D IRFS52N15D IRFSL52N15D HEXFET® Power MOSFET Applications l High frequency DC-DC converters VDSS 150V RDS(on) m

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Preliminary Technical Information PolarHTTM Power MOSFET (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated IXTC 62N15P IXTR 62N

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isc N-Channel MOSFET Transistor IXFA102N15T ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 18mΩ@VGS=10V ·Fully characterized avalanche volt

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isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 18mΩ@VGS=10V ·Fully characterized avalanche voltage and curre

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N- Channel 150V (D-S) MOSFET GENERAL DESCRIPTION The ME12N15 is the N-Channel logic enhancement mode power field effect transistors are produced using

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isc N-Channel MOSFET Transistor IXTA42N15T ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 45mΩ@VGS=10V ·Fully characterized avalanche volta

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isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 150V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 40mΩ(Max) ·Fast Swi

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High Voltage Power MOSFET IXTT12N150 IXTH12N150 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 IDM

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N- Channel 150V (D-S) MOSFET GENERAL DESCRIPTION The ME12N15 is the N-Channel logic enhancement mode power field effect transistors are produced using

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PD - 94357A SMPS MOSFET IRFB52N15D IRFS52N15D IRFSL52N15D HEXFET® Power MOSFET Applications l High frequency DC-DC converters VDSS 150V RDS(on) m

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