2N2955 Datasheet | Specifications & PDF Download

isc Silicon PNP Power Transistors DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain- : hFE=20-70@IC= -4A ·Collector-Emitter Saturation Volt

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UNISONIC TECHNOLOGIES CO., LTD 2N2955 PNP SILICON TRANSISTOR SILICON PNP TRANSISTORS  DESCRIPTION The UTC 2N2955 is a silicon PNP transistor in T

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2N2955 (GERMANIUM) 2N2956 2N2957 CASE12(\~ (TO.18)Z \ \ Collector connected to case PNP germanium epitaxial mesa transistors for highspeed switching

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DC COMPONENTS CO., LTD. R 2N2955 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designed for powe

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UTC 2N2955 SILICON PNP TRANSISTORS The UTC 2N2955 is a silicon PNP transistor in TO-3 SILICON PNP TRANSISTOR metal case. It is intended for power sw

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INCHANGE Semiconductor isc Silicon PNP Power Transistors isc Product Specification 2N2955HV DESCRIPTION ·Excellent Safe Operating Area ·DC Current G

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