2N3 Datasheet | Specifications & PDF Download

MOTOROLA SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors NPN Silicon COLLECTOR 3 2N3903 2N3904* *Motorola Preferred Device 2 BASE 1 EMITT

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isc Silicon NPN Power Transistor DESCRIPTION ·Excellent Safe Operating Area ·Low Collector-Emitter Saturation Voltage ·100% avalanche tested ·Minimum

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ST 2N3903 / 2N3904 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. As complementary types the PNP transistors 2N3905

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Bipolar Transistor Description: The 2N3902 is a silicon NPN transistor in a TO-3 type Package designed for use in high voltage inverters, converters,

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TECHNICAL DATA NPN HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/371 Devices 2N3902 2N5157 Qualified Level JAN JANTX MAXIMUM RATINGS

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2N3902 NPN (SILICON) 2N5157 HIGH VOLTAGE NPN SILICON TRANSISTORS . designed for use in high·voltage inverters, converters, switching regulators and l

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2N3902 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) Bipolar NPN

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General Purpose Transistors NPN Silicon 2N3903, 2N3904 Features • Pb−Free Packages are Available* DATA SHEET www.onsemi.com COLLECTOR 3 2 BASE 1 EMIT

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2N3903 Discrete POWER & Signal Technologies 2N3903 C BE TO-92 NPN General Purpose Amplifier This device is designed for use as general purpose a

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2N3902 & 2N5157 NPN High Power Silicon Transistors Features • Available in JAN, JANTX, JANTXV per MIL-PRF-19500/371 • TO-3 (TO-204AA) Package • Design

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2N3902 & 2N5157 NPN High Power Silicon Transistors Features  Available in JAN, JANTX, JANTXV per MIL-PRF-19500/371  TO-3 (TO-204AA) Package Rev. V1

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SILICON NPN EPITAXIAL TYPE (PCT PROCESS) 2N3903 FOR GENERAL PURPOSE USE SWITCHING AND AMPLIFIER APPLICATIONS. FEATURES . Low Leakage Current : ICEV=

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SILICON NPN EPITAXIAL TYPE (PCT PROCESS) 2N3904 FOR GENERAL PURPOSE USE SWITCHING AND AMPLIFIER APPLICATIONS. . FEATURES . Low Leakage Current : ICE

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2N3904 / MMBT3904 / PZT3904 — NPN General-Purpose Amplifier October 2014 2N3904 / MMBT3904 / PZT3904 NPN General-Purpose Amplifier Description This

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isc Silicon NPN Power Transistor DESCRIPTION ·Excellent Safe Operating Area ·High DC Current Gain-hFE=15(Min)@IC = 8A ·Low Saturation Voltage- : VCE(s

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TAB 1 2 TO-3 Figure 1. Internal schematic diagram 2N3055, MJ2955 Complementary power transistors Datasheet - production data Features • Low collector

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® 2N3904 SMALL SIGNAL NPN TRANSISTOR PRELIMINARY DATA Ordering Code 2N3904 2N3904-AP Marking Package / Shipment 2N3904 TO-92 / Bulk 2N3904 TO-92 /

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® 2N3906 SMALL SIGNAL PNP TRANSISTOR PRELIMINARY DATA Ordering Code 2N3906 2N3906-AP Marking Package / Shipment 2N3906 TO-92 / Bulk 2N3906 TO-92 /

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2N3904 General Purpose Transistors NPN TO-92 High Speed Switching Features: • NPN silicon planar switching transistors. • Fast switching devices exh

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NPN General - Purpose Amplifier 2N3904 Description This device is designed as a general−purpose amplifier and switch. The useful dynamic range extend

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