2N3 Datasheet | Specifications & PDF Download

MOTOROLA SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors NPN Silicon COLLECTOR 3 2N3903 2N3904* *Motorola Preferred Device 2 BASE 1 EMITT

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isc Silicon NPN Power Transistor DESCRIPTION ·Excellent Safe Operating Area ·Low Collector-Emitter Saturation Voltage ·100% avalanche tested ·Minimum

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Bipolar Transistor Description: The 2N3902 is a silicon NPN transistor in a TO-3 type Package designed for use in high voltage inverters, converters,

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TECHNICAL DATA NPN HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/371 Devices 2N3902 2N5157 Qualified Level JAN JANTX MAXIMUM RATINGS

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TAB 1 2 TO-3 Figure 1. Internal schematic diagram 2N3055, MJ2955 Complementary power transistors Datasheet - production data Features • Low collector

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2N3902 NPN (SILICON) 2N5157 HIGH VOLTAGE NPN SILICON TRANSISTORS . designed for use in high·voltage inverters, converters, switching regulators and l

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® 2N3906 SMALL SIGNAL PNP TRANSISTOR PRELIMINARY DATA Ordering Code 2N3906 2N3906-AP Marking Package / Shipment 2N3906 TO-92 / Bulk 2N3906 TO-92 /

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2N3904 / MMBT3904 / PZT3904 — NPN General-Purpose Amplifier October 2014 2N3904 / MMBT3904 / PZT3904 NPN General-Purpose Amplifier Description This

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2N3902 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) Bipolar NPN

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ST 2N3903 / 2N3904 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. As complementary types the PNP transistors ST 2N3

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www.DataSheet4U.com CORPORATION Description Features ISSUED DATE :2003/12/12 REVISED DATE :2005/06/24C G2N3904 N P N E P I TA X I A L P L A N A R

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SILICON NPN DUAL TRANSISTORS 2N3904DCSM Features: • Hermetic Ceramic Surface Mount Package • Designed For General Purpose and Switching Applications •

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Advanced Technical Information www.DataSheet4U.com PolarHTTM HiPerFET IXFK 102N30P IXFN 102N30P Power MOSFET N-Channel Enhancement Mode Fast Intrinsi

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isc Silicon NPN Power Transistor DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain-hFE=20-70@IC = 4A ·Collector-Emitter Saturation Voltage-

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p-channel JFETs designed for • • • • Small-Signal Amplifiers • Analog Multipliers • Modulators H Performance Curves PC See Section 4 BENEFITS • Ease

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LAB MECHANICAL DATA Dimensions in mm (inches) SEME 2N3904CSM GENERAL PURPOSE NPN TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE

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2N3055H 15A Power Transistors Features: • The 2N3055H is a Silicon power base transistor for high power audio, seriespass power supplies, disk-head po

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2N3906 / MMBT3906 / PZT3906 — PNP General-Purpose Amplifier April 2014 2N3906 / MMBT3906 / PZT3906 PNP General-Purpose Amplifier Description This de

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CYStech Electronics Corp. N-CHANNEL MOSFET Spec. No. : C325N3 www.DataSheet4U.com Issued Date : 2002.12.18 Revised Date : 2005.01.07 Page No. : 1/4

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