2N60H Datasheet | Specifications & PDF Download

KIA SEMICONDUCTORS 2.0A, 600V N-CHANNEL MOSFET 2N60H 1.Description The KIA2N60H N-Channel enhancement mode silicon gate power MOSFET is designed fo

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AP02N60H/J-H RoHS-compliant Product Advanced Power Electronics Corp. ▼ 100% Avalanche Test ▼ Lower Gate Charge ▼ Fast Switching Characteristic ▼ Simp

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Advanced Power Electronics Corp. AP02N60H/J-H-HF Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lower Gate Charge ▼ Fast Switching C

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Advanced Power Electronics Corp. AP02N60H/J-HF-3 N-channel Enhancement-mode Power MOSFET Simple Drive Requirement Repetitive Avalanche Rated Fast Sw

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Advanced Power Electronics Corp. AP02N60H/J-H-HF-3 N-channel Enhancement-mode Power MOSFET Simple Drive Requirement Repetitive Avalanche Rated Fast

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Advanced Power Electronics Corp. AP02N60H/J-HF Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Avalanche Test ▼ Lower Gate Charg

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12N60(F,B,H) 12A mps,600 Volts N-CHANNEL MOSFET FEATURE  12A,600V,RDS(ON)=0.7Ω@VGS=10V/6A  Low gate charge  Low Ciss  Fast switching  100% ava

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2N60(F,B,H,G,D)S 2 Amps,600 Volts N-Channel Super Junction Power MOSFET FEATURE  2A,600V,RDS(ON)MAX=2.2Ω@VGS=10V/1A  Low gate charge  Low Ciss 

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AP02N60H/J www.DataSheet4U.com Pb Free Plating Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET Advanced Power Electronics Corp. ▼ Low Gate Charge ▼

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KIA SEMICONDUCTORS 2.0A, 600V N-CHANNEL MOSFET 2N60H 1.Description The KIA2N60H N-Channel enhancement mode silicon gate power MOSFET is designed fo

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2N60(F,B,H,G,D) 2A mps,600 Volts N-CHANNEL MOSFET FEATURE  2A,600V,RDS(ON)=4Ω@VGS=10V/1A  Low gate charge  Low Ciss  Fast switching  100% avala

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Elektronische Bauelemente SSR52N60H-C 52A, 600V, RDS(ON) 92mΩ N-Channel Super Junction Power MOSFET RoHS Compliant Product A suffix of “-C” specifie

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