2N60P Datasheet | Specifications & PDF Download

www.DataSheet4U.com SSM02N60P N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Repetitive-avalanche rated Fast-switching Simple drive requirement G D BV DSS

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SEMICONDUCTOR TECHNICAL DATA KF2N60P/F N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KF2N60P This planar stripe MOSFET has better char

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AP02N60P www.DataSheet4U.com Pb Free Plating Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET Advanced Power Electronics Corp. ▼ Repetitive Avalanche

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isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 350mΩ(Max) ·Fast Sw

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PolarHVTM HiPerFET Power MOSFETs N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated IXFH 22N60P IXFV 22N60P IXFV 22N60PS VDSS = 600 V I

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isc N-Channel MOSFET Transistor IXTP2N60P ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 5.1Ω@VGS=10V ·Fully characterized avalanche voltag

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Advance Technical Information Polar3TM HiperFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXFP22N60P3 IXFQ

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PolarHVTM HiPerFET Power MOSFET ISOPLUS264TM (Electrically Isolated Back Surface) IXFL 82N60P VDSS = 600 V ID25 = 82 A RDS(on) ≤ 78 mΩ ≤ 200 ns trr

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PolarHVTM HiPerFET Power MOSFETs N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated IXFH 22N60P IXFV 22N60P IXFV 22N60PS VDSS = 600 V I

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2A, 600V, N 2N60 Series N-Channel MOSFET FQP2N60C FQPF2N60C H H2N60P H2N60F 2N60 HAOHAI P: TO-220AB F: TO-220FP 50Pcs 1000Pcs

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PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTY2N60P IXTP2N60P Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg

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Polar3TMHiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXFH42N60P3 D G S VDSS = ID25 = RDS(on)  600V

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www.DataSheet4U.com PolarHVTM HiPerFET Power MOSFETs N-Channel Enhancement Mode Fast Intrinsic Diode; Avalanche Rated Preliminary Data Sheet IXFH 22

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Advance Technical Information Polar3TM HiperFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXFP22N60P3 IXFQ

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Preliminary Technical Information Polar3TM HiperFETTM IXFA22N60P3 Power MOSFETs IXFP22N60P3 IXFQ22N60P3 N-Channel Enhancement Mode IXFH22N60P3

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SCT12N60P Triac 600V, 12A STANDARD TRIAC This device is suitable for low power AC switching application, phase control application such as fan speed

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isc N-Channel MOSFET Transistor IXTY2N60P ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 5.1Ω@VGS=10V ·100% avalanche tested ·Minimum Lot-t

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isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 350mΩ(Max) ·Fast Sw

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2N60 Surface Mount N-Channel Power MOSFET P b Lead(Pb)-Free DRAIN CURRENT 2 AMPERES Description: This advanced technology has been especially tailo

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