IXFL82N60P Datasheet | IXYS

Polar HVTM Hi Per FET Power MOSFET ISOPLUS264TM (Electrically Isolated Back Surface) IXFL 82N60P VDSS = 600 V ID25 = 82 A RDS(on) ≤ 78 mΩ ≤ 200 ns trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL FC Weight 1.6 mm (0.062 in.) from case for 10 s 50/60 Hz, RMS IISOL ≤1 m A Mounting force t = 1 min t=1s Test Conditions TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ Continuous Transient TC = 25° C TC = 25° C, pulse width limited by TJM TC = 25° C TC = 25° C TC = 25° C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤150° C, RG = 2 Ω TC = 25° C Maximum Ratings 600 600 ±30 ±40 55 200 82 100 5 20 625 -55 ... +150 150 -55 ... +150 300 2500 3000 28..150 / 6.4..30 10 V V V V A A A m J J V/ns W °C °C °C °C V~ V~ N/lb g Features l ISOPLUS264 TM (IXFL) (Isolated Tab) G = Gate S = Source D = Drain l International standard isolated package UL recognized package Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Fast intrinsic diode l l l l Advantages l Symbol Test Conditions (TJ = 25° C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 3 m A VDS = VGS, ID = 8 m A VGS = ±30 VDC, VDS = 0 VDS = VDSS VGS = 0 V VGS = 10 V, ID = IT, Note 1 TJ = 125° C Characteristic Values Min. Typ. Max. 600 3.0 5.0 ±200 25 1000 78 V V n A µA µA mΩ l l Easy to mount Space savings High power density © 2006 IXYS All rights reserved DS99531E(02/06) IXFL 82N60P Symbol Test Conditions Characteristic Values (TJ = 25° C, unless otherwise specified) Min. Typ. Max. 50 80 23 VGS = 0 V, VDS = 25 V, f = 1 MHz 1490 200 28 VGS = 10 V, VDS = 0.5 VDSS, ID = IT RG = 1 Ω (External) 23 79 24 240 VGS = 10 V, VDS = 0.5 VDSS, ID = IT 96 67 S n F p F p F ns ns ns ns n C n C n C 0.20 ° C/W 0.13 ° C/W Note: Bottom...