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PolarHVTM HiPerFET Power MOSFET ISOPLUS264TM
(Electrically Isolated Back Surface)
IXFL 82N60P
VDSS = 600 V ID25 = 82 A RDS(on) ≤ 78 mΩ ≤ 200 ns trr
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL FC Weight 1.6 mm (0.062 in.) from case for 10 s 50/60 Hz, RMS IISOL ≤1 mA Mounting force t = 1 min t=1s Test Conditions TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ Continuous Transient TC = 25° C TC = 25° C, pulse width limited by TJM TC = 25° C TC = 25° C TC = 25° C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤150° C, RG = 2 Ω TC = 25° C Maximum Ratings 600 600 ±30 ±40 55 200 82 100 5 20 625 -55 ... +150 150 -55 ... +150 300 2500 3000 28..150 / 6.4..
IXFL82N60P Datasheet
