IXFL80N50Q2 Datasheet | IXYS

Features Electrically isolated mounting tab Double metal process for low gate resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Fast intrinsic diode Applications DC-DC converters Switched-mode and resonant-mode power supplies DC choppers Pulse generation Laser drivers Advantages 2500 V~ Electrical isolation ISOPLUS 264TM package for clip or spring mounting Space savings High power density ..net Weight Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. 500 3.0 5.5 ± 200 TJ = 125°C V V n A BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 1m A VDS = VGS, ID = 8m A VGS = ±30 V, VDS = 0V VDS = VDSS VGS = 0V VGS = 10V, ID = 40A, Note 1 100 μA 5 m A 66 mΩ © 2008 IXYS CORPORATION, All rights reserved DS99360B(05/08) Symbol Test Conditions (TJ = 25°C, unless otherwise specified) gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd Rth JC Rth CS 0.15 VGS = 10V, VDS = 0.5 - VDSS, ID = 40A Resistive Switching Times VGS = 10V, VDS = 0.5 - VDSS, ID = 40A RG = 1Ω (External) VGS = 0V, VDS = 25V, f = 1MHz VDS = 10V, ID = 40A, Note 1 Characteristic Values Min. Typ. Max. 50 65 12.8 1640 440 29 25 60 11 250 80 120 S n F p F p F ns ns ns ns n C n C n C 0.33 °C/W °C/W Note: Bottom heatsink meets ISOPLUS264TM (IXFL) Outline Source-Drain Diode Symbol Test Conditions (TJ = 25°C, unless otherwise specified) IS ISM VSD trr QRM IRM ..net Characteristic Values Min. Typ. Max. 80 320 1.5 250 1.4 12 A Ref: IXYS CO 0128 VGS = 0V Repetitive, pulse width limited by TJM IF = IS, VGS = 0V, Note 1 IF = 25A, VGS = 0V -di/dt = 100 A/μs VR = 100 V A V ns μC A Note: 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2 %. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715...