IXFL82N60P Datasheet | IXYS

Features l ISOPLUS264 TM (IXFL) (Isolated Tab) G = Gate S = Source D = Drain l International standard isolated package UL recognized package Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Fast intrinsic diode l l l l Advantages l Symbol Test Conditions (TJ = 25° C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 3 m A VDS = VGS, ID = 8 m A VGS = ±30 VDC, VDS = 0 VDS = VDSS VGS = 0 V VGS = 10 V, ID = IT, Note 1 TJ = 125° C Characteristic Values Min. Typ. Max. 600 3.0 5.0 ±200 25 1000 78 V V n A µA µA mΩ l l Easy to mount Space savings High power density © 2006 IXYS All rights reserved DS99531E(02/06) IXFL 82N60P Symbol Test Conditions Characteristic Values (TJ = 25° C, unless otherwise specified) Min. Typ. Max. 50 80 23 VGS = 0 V, VDS = 25 V, f = 1 MHz 1490 200 28 VGS = 10 V, VDS = 0.5 VDSS, ID = IT RG = 1 Ω (External) 23 79 24 240 VGS = 10 V, VDS = 0.5 VDSS, ID = IT 96 67 S n F p F p F ns ns ns ns n C n C n C 0.20 ° C/W 0.13 ° C/W Note: Bottom heatsink meets 2500Vrms Isolation to the other pins. ISOPLUS264 (IXFL) Outline gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd Rth JC Rth CS VDS = 20 V; ID = IT, Note 1 Source-Drain Diode Symbol IS ISM VSD trr QRM IRM Notes: Test Conditions VGS = 0 V Repetitive IF = IS, VGS = 0 V, Note 1 IF = 25A, -di/dt = 100 A/µs VR = 100V Characteristic Values (TJ = 25° C, unless otherwise specified) Min. Typ. Max. 82 200 1.5 200 0.6 6.0 A A V ns µC A Ref: IXYS CO 0128 R0 1. Pulse test, t ≤300 µs, duty cycle d≤ 2 % Test Current IT = 41A IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715...