2N6515 Datasheet | Specifications & PDF Download

2N6515 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR • Collector-Emitter Voltage: VCEO= 250V • Collector Dissipation: PC (max)=625mW ABS

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MCC Features
     omponents 21201 Itasca Street Chatsworth  # $ % # NPN 2N6515, 2N6517 P

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Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTORS 2N6515, 2N6519 2N

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N6515/D High Voltage Transistors COLLECTOR 3 COLLECTOR 3 2 BASE NPN 1 EMITTER 2 B

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2N6515 2N6516 2N6517 NPN 2N6518 2N6519 2N6520 PNP COMPLEMENTARY SILICON HIGH VOLTAGE TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: Th

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NPN − 2N6515, 2N6517; PNP − 2N6520 High Voltage Transistors NPN and PNP Features • Voltage and Current are Negative for PNP Transistors • These are Pb

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