2N656 (SILICON) 2N657 NPN SILICON ANNULAR TRANSIS.
Seme LAB
2N6569 - Bipolar NPN Device
2N6569 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) Bipolar NPN .
SSDI
2N6562 - NPN Transistor
10 AMP NPN (continued) Sorted by IC, then VCEO Part Number mIaCx (A) mVCaExO (V) mhFiEn mhaFEx @Ic (A) 2N6562 2N6581 2N6590 10 450 10 40 5 10.
SavantIC
2N6569 - Silicon Power Transistor
SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors 2N6569 DESCRIPTION ·With TO-3 package ·Complement t.
Motorola
2N656 - NPN Transistor
2N656 (SILICON) 2N657 NPN SILICON ANNULAR TRANSISTORS . NPN silicon annular transistor designed for small-signal amplifier and general purpose switch.
Seme LAB
2N6561 - Bipolar NPN Device
2N6561 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) Bipolar NPN .
SSDI
2N6563 - NPN Transistor
10 AMP NPN(continued) Sorted by IC, then VCEO Part Number mIaCx (A) mVCaExO (V) Ratings based on 25˚C case temperature unless otherwise specified .
Seme LAB
2N6560 - Bipolar NPN Device
2N6560 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) Bipolar NPN .
INCHANGE
2N6561 - Silicon NPN Power Transistor
isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : VCEO=300V(Min) ·Minimum Lot-to-Lot variations for robust device .
INCHANGE
2N6560 - Silicon NPN Power Transistor
isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : VCEO=450V(Min) ·Minimum Lot-to-Lot variations for robust device .
