2N665 (GERMANIUM) CASE~ (TO-3) PNP germanium pow.
2N6653 - Bipolar NPN Device
2N6653 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN.2N6650 - PNP DARLINGTON POWER SILICON TRANSISTOR
TECHNICAL DATA PNP DARLINGTON POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/527 Devices 2N6648 2N6649 2N6650 Qualified Level JANTX JANTXV MAXI.2N6653 - NPN Transistor
isc Silicon NPN Power Transistor DESCRIPTION ·High Voltage Capability ·High Current Current Capability ·Low Collector Saturation Voltage·High Switchi.2N6654 - Bipolar NPN Device
2N6654 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN.2N6659 - N-CHANNEL ENHANCEMENT MODE MOS TRANSISTOR
2N6659 MECHANICAL DATA Dimensions in mm (inches) 8.89 (0.35) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) N–CHANNEL ENHANCEMENT MODE MOS TRANSISTOR FEATURE.2N665 - PNP Transistor
2N665 (GERMANIUM) CASE~ (TO-3) PNP germanium power transistor for driver and power output amplifier and power switching applications in military and.2N6659-2 - N-Channel MOSFET
www.vishay.com 2N6659, 2N6659-2 Vishay Siliconix N-Channel 35 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V Configuration TO-205.2N6659 - N-Channel MOSFET
~ 't1I iupertexinc. 2N6659 N-Channel Enhancement-Mode Vertical DMOS Power FET Ordering Information BVoss / BVOGS 35V ROS(ON) (max) 1.8n IO(ON.2N6659 - N-Channel MOSFET
www.vishay.com 2N6659, 2N6659-2 Vishay Siliconix N-Channel 35 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V Configuration TO-205.2N6654 - Silicon Power Transistor
SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·High voltage capabili.2N6650 - Darlington Power Transistor
Darlington Power Transistor 2N6383-2N6385 2N6648-2N6650 Darlington Power Transistor NPN: 2N6383, 2N6384, 2N6385 PNP: 2N6648, 2N6649, 2N6650 Featur.2N6650 - PNP silicon power darington transistor
145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824 .2N6654 - NPN Transistor
isc Silicon NPN Power Transistor DESCRIPTION ·High Voltage Capability ·High Current Current Capability ·Low Collector Saturation Voltage·High Switchi.2N6659X - N-CHANNEL ENHANCEMENT MODE MOSFET
N-CHANNEL ENHANCEMENT MODE MOSFET 2N6659X • Switching Regulators • Converters • Motor Drives ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise sta.2N6655 - Bipolar NPN Device
2N6655 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN.2N6659 - TMOS SWITCHING FET TRANSISTORS
2N6659 MPF6659 2N6660 MPF6660 2N6661 MPF6661 N-CHANNEL ENHANCEMENT-MODE TMOS POWER FIELD-EFFECT TRANSISTOR These TMOS Power FETs are designed. for h.2N6653 - Silicon Power Transistor
SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·High voltage capabili.2N6650 - PNP Silicon Power Darlington Transistors
2N6648 2N6649 2N6650 PNP Silicon Power Darlington Transistors Features • Available in JAN, JANTX, JANTXV per MIL-PRF-19500/527 • TO-3 (TO-204AA) Pack.