2N6718 Datasheet | Specifications & PDF Download

Elektronische Bauelemente 2N6716 / 2N6717 / 2N6718 1A , 100V NPN Plastic Encapsulated Transistor FEATURES  High Voltage：VCEO = 100V  Gain of 20 @

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UNISONIC TECHNOLOGIES CO., LTD 2N6718 NPN SILICON TRANSISTOR NPN GENERAL PLANAR TRANSISTOR  DESCRIPTION The UTC 2N6718 is designed for general pu

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Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR 2N6718 TO-237 Plas

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NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 1 – MARCH 94 FEATURES * 100 Volt VCEO * Gain of 20 at IC = 0.5 Amp * Ptot=1 Watt 2N6716 2N6717 2N67

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HI-SINCERITY MICROELECTRONICS CORP. H2N6718V NPN EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6616 Issued Date : 1993.09.24 Revised Date : 2006.02.20 Pa

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HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6218 Issued Date : 1992.11.25 Revised Date : 2004.05.03 Page No. : 1/5 H2N6718L NPN EPITAXIAL PLAN

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MCC R Micro Commercial Components
     omponents 20736 Marilla Street Chatsworth  # $ % #

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2N6718 Rev.E Mar.-2016 DATA SHEET / Descriptions TO-126F NPN 。Silicon NPN transistor in a TO-126F Plastic Package.  / Features ，。 High VCEO,

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145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824 www.DataSheet4U.com

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