2SA1579 Datasheet | Specifications & PDF Download

1. BASE 2. EMITTER 3. COLLECTOR Features — High breakdown voltage. (BVCEO = -120V) — Complements the 2SC4102 2SA1579 SOT-323 Transistor(PNP) SOT-323

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PNP Silicon Epitaxial Planar Transistor FEATURES  Power dissipation.(PC=200mW)  Excellent HFE Linearity. Pb Lead-free Production specification 2S

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2SA1579 FRA High-voltage Amplifier Transistor (-120V, -50mA) Parameter VCEO IC Value -120V -50mA lFeatures 1)High breakdown voltage. (BVCEO=-120V)

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2SA1579 / 2SA1514K High-voltage Amplifier Transistor (-120V,-50mA) Datasheet Parameter VCEO IC Value -120V -50mA lFeatures 1)High breakdown voltag

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SMD Type High-Voltage Amplifier Transistor 2SA1579 Transistors Features High breakdown voltage. 1 Emitter 2 Base 3 Collector Absolute Maximum Rati

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2SA1 57 9 TRANSISTOR(PNP) SOT-323 1. BASE FEATURES z High breakdown voltage. (BVCEO = -120V) z Complements the 2SC4102 MAXIMUM RATINGS (TA=25℃ unle

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SMD Type Product specification Transistors 2SA1579 Features High breakdown voltage. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25

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2SA1579 Elektronische Bauelemente -0.05A , -120V PNP Silicon Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies haloge

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