JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD.
JCET
2SA1611 - PNP Transistor
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD JC(T SOT-323 Plastic-Encapsulate Transistors 2SA1611 TRANSISTOR (PNP) FEATURES High DC Curren.
GME
2SA1611 - PNP Silicon Transistor
PNP Silicon Epitaxial Planar Transistor FEATURES High voltage VCEO=-50V. Excellent HFE Linearity. High DC current gain : hFE=200 typ. Complem.
TRANSYS
2SA1611 - Transistor
Transys Electronics L I M I T E D SOT-323 Plastic-Encapsulated Transistors SOT-323 2SA1611 FEATURES Power dissipation PCM TRANSISTOR (PNP) 1. BASE .
Kexin
2SA1611 - Transistor
SMD Type PNP Silicon Epitaxia 2SA1611 Transistors IC Features High DC Current Gain. High Voltage. 1 Emitter 2 Base 3 Collector Absolute Maximum Ra.
SeCoS
2SA1611 - PNP Silicon Plastic Encapsulated Transistor
2SA1611 Elektronische Bauelemente -0.1A , -60V PNP Silicon Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen .
Jin Yu Semiconductor
2SA1611 - Transistor
2SA1 61 1 TRANSISTOR(PNP) FEATURES High DC Current Gain High Voltage Complementary to 2SC4177 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Sy.
TY Semiconductor
2SA1611 - Transistor
Product specification 2SA1611 Features High DC Current Gain. High Voltage. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter.
Galaxy Semi-Conductor
2SA1611W - PNP Silicon Epitaxial Planar Transistor
BL Galaxy Electrical PNP Silicon Epitaxial Planar Transistor FEATURES z z z z High voltage VCEO=-50V. Excellent HFE Linearity. High DC current gain : .
