2SA1611 Datasheet | Specifications & PDF Download

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD JC(T SOT-323 Plastic-Encapsulate Transistors 2SA1611 TRANSISTOR (PNP) FEATURES  High DC Curren

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PNP Silicon Epitaxial Planar Transistor FEATURES  High voltage VCEO=-50V.  Excellent HFE Linearity.  High DC current gain : hFE=200 typ.  Complem

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Transys Electronics L I M I T E D SOT-323 Plastic-Encapsulated Transistors SOT-323 2SA1611 FEATURES Power dissipation PCM TRANSISTOR (PNP) 1. BASE

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SMD Type PNP Silicon Epitaxia 2SA1611 Transistors IC Features High DC Current Gain. High Voltage. 1 Emitter 2 Base 3 Collector Absolute Maximum Ra

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2SA1611 Elektronische Bauelemente -0.1A , -60V PNP Silicon Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen

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2SA1 61 1 TRANSISTOR(PNP) FEATURES  High DC Current Gain  High Voltage  Complementary to 2SC4177 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Sy

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Product specification 2SA1611 Features High DC Current Gain. High Voltage. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter

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