B1016A (Toshiba)
2SB1016A
TOSHIBA Transistor Silicon PNP Epitaxial Type
2SB1016A
Power Amplifier Applications
2SB1016A
Unit: mm
• High breakdown voltage: VCEO = −100 V • Low
(34 views)
2SB1016 (INCHANGE)
PNP Transistor
isc Silicon PNP Power Transistor
2SB1016
DESCRIPTION ·Low Collector Saturation Voltage-
: VCE(sat)= -2.0 V(Max)@IC= -4A ·Good Linearity of hFE ·Comp
(27 views)
2SB1016 (Toshiba)
SILICON PNP TRANSISTOR
:
SILICON PNP TRIPLE DIFFUSED TYPE
—
POWER AMPLIFIER APPLICATIONS.
FEATURES
.
High
Breakdown
Voltage
:
V^g =-100V (3
. Low Collector-Emitter
(26 views)
2SB1016A (Toshiba Semiconductor)
Silicon PNP Transistor
TOSHIBA Transistor Silicon PNP Epitaxial Type
2SB1016A
Power Amplifier Applications
2SB1016A
Unit: mm
• High breakdown voltage: VCEO = −100 V • Low
(24 views)
2SB1016 (SavantIC)
SILICON POWER TRANSISTOR
SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon PNP Power Transistors
2SB1016
DESCRIPTION ·With TO-220Fa package ·High br
(24 views)
