2SB1016 Datasheet | Specifications & PDF Download

TOSHIBA Transistor Silicon PNP Epitaxial Type 2SB1016A Power Amplifier Applications 2SB1016A Unit: mm • High breakdown voltage: VCEO = −100 V • Low

(10 views)

SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2SB1016 DESCRIPTION ·With TO-220Fa package ·High br

(8 views)

isc Silicon PNP Power Transistor 2SB1016 DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= -2.0 V(Max)@IC= -4A ·Good Linearity of hFE ·Comp

(7 views)

: SILICON PNP TRIPLE DIFFUSED TYPE — POWER AMPLIFIER APPLICATIONS. FEATURES . High Breakdown Voltage : V^g =-100V (3 . Low Collector-Emitter

(6 views)

TOSHIBA Transistor Silicon PNP Epitaxial Type 2SB1016A Power Amplifier Applications 2SB1016A Unit: mm • High breakdown voltage: VCEO = −100 V • Low

(4 views)