INCHANGE
2SB554 - PNP Transistor
isc Silicon PNP Power Transistor
DESCRIPTION ·High Power Dissipation-
: PC= 150W@TC= 25℃ ·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 180V(
Rating:
1
★
(3 votes)
Toshiba
2SB554 - PNP Transistor
:
SILICON PNP TRIPLE DIFFUSED TYPE
Unit in mm
POWER AMPLIFIER APPLICATIONS,
FEATURES
• High Power Dissipation • High Breakdown Voltage :
P c = 1
Rating:
1
★
(1 votes)
SavantIC
2SB554 - SILICON POWER TRANSISTOR
SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon PNP Power Transistors
2SB554
DESCRIPTION ·With TO-3 package ·Complement t
Rating:
1
★
(1 votes)
