2SB624 Datasheet | Specifications & PDF Download

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isc Silicon PNP Transistor INCHANGE Semiconductor 2SB624 DESCRIPTION ·SOT-23 plastic-encapsulate transistors ·High DC current gain:hFE=200(TYP) @VCE

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Production specification Silicon Epitaxial Planar Transistor FEATURES  High DC current gain.hFE: 200TYP (VCE=-1.0V,IC=-100mA)  Complimentary to th

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SMD Type PNP Transistors 2SB624-HF Transistors ■ Features ● High DC current gain. hFE:200 TYP.(VCE=-1V,IC=-100mA) ● Complimentary to 2SD596-HF. ● P

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Transys Electronics LIMITED SOT-23-3L Plastic-Encapsulated Transistors 2SB624 TRANSISTOR (PNP) FEATURES Power dissipation PCM: 0.2 W (Tamb=25℃)

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PNP Epitaxial Planar Transistors P b Lead(Pb)-Free ABSOLUTE MAXIMUM RATINGS (TA=25˚C) Rating Collector-Base Voltage Collector-Emitter Voltage Emitter

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Elektronische Bauelemente 2SB624 -0.7A , -30V PNP Silicon Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SB624 TRANSISTOR (PNP) FEATURES z High DC current gain. hF

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