2SC2411-P Datasheet | Specifications & PDF Download

2SC2411K Medium Power Transistor (32V, 500mA) Parameter VCEO IC Value 32V 500mA lFeatures 1) High ICMAX 　 ICMAX=0.5A 2)Low VCE(sat) 　 Optimal for l

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LESHAN RADIO COMPANY, LTD. Medium Power Transistor NPN silicon FEATURE ƽEpitaxial planar type ƽComplementary to L2SA1036K www.DataSheet4U.ƽcoPmb-Fre

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LESHAN RADIO COMPANY, LTD. Medium Power Transistor NPN silicon FEATURE ƽEpitaxial planar type ƽComplementary to L2SA1036K www.DataSheet4U.ƽcoPmb-Fre

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LESHAN RADIO COMPANY, LTD. Medium Power Transistor NPN silicon FEATURE ƽEpitaxial planar type ƽComplementary to L2SA1036K www.DataSheet4U.ƽcoPmb-Fre

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LESHAN RADIO COMPANY, LTD. Medium Power Transistor NPN silicon FEATURE ƽEpitaxial planar type ƽComplementary to L2SA1036K ƽWe declare that the materi

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2SC2411K Rev.E Mar.-2016 DATA SHEET / Descriptions SOT-23 NPN 。Silicon NPN transistor in a SOT-23 Plastic Package.  / Features ,, 2SA1036K 。

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REPLACEMENT TYPE : 2SC2411 FEATURES  High ICMax.ICMax.=0.5mA  Low VCE(sat).Optimal For Low Voltage Operation  Complements The HAA1036 MAXIMUM RATI

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2SC2411 Elektronische Bauelemente NPN Transistor Plastic-Encapsulate Transistors A suffix of -C specifies halogen & lead-free SOT-23 FEATURES 1

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SMD Type Medium Power Transistor 2SC2411K SOT-23 Transistors Unit: mm High ICMax. ICMax. = 0.5A +0.1 2.4-0.1 Low VCE(sat). Optimal for low voltage

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2SC2411K NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE FEATURES • NPN epitaxial silicon,planar design • Collector-emitter voltage VCE=32V • Collect

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LESHAN RADIO COMPANY, LTD. Medium Power Transistor NPN silicon FEATURE ƽEpitaxial planar type ƽComplementary to L2SA1036K www.DataSheet4U.ƽcoPmb-Fre

(9 views)

LESHAN RADIO COMPANY, LTD. Medium Power Transistor NPN silicon FEATURE ƽEpitaxial planar type ƽComplementary to L2SA1036K www.DataSheet4U.ƽcoPmb-Fre

(9 views)

LESHAN RADIO COMPANY, LTD. Medium Power Transistor NPN silicon FEATURE ƽEpitaxial planar type ƽComplementary to L2SA1036K www.DataSheet4U.ƽcoPmb-Fre

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LESHAN RADIO COMPANY, LTD. Medium Power Transistor NPN silicon FEATURE ƽEpitaxial planar type ƽComplementary to L2SA1036K ƽWe declare that the materi

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Production specification Silicon Epitaxial Planar Transistor FEATURES  Power dissipation: PCM=200Mw.  High ICM(MAX.),I CM(MAX.)=0.5mA.  Low VCE(s

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MCC TM Micro Commercial Components
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MCC TM Micro Commercial Components
     omponents 20736 Marilla Street Chatsworth  # $ % #

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CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT Medium Power NPN Transistor VOLTAGE 32 Volts APPLICATION * Medium Power Amplifier . 2SC2411KPT CURRENT 0.5

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FM120-M+ 2SC2411KxLT1 THRU Medium Power Transistor FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V WILLAS SOD-123+ PACKAGE Pb F

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