2SC3518-Z Datasheet | Specifications & PDF Download

isc Silicon NPN Power Transistor DESCRIPTION ·Low collector saturation voltage ·High DC current gain ·Minimum Lot-to-Lot variations for robust device

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isc Silicon NPN Power Transistor DESCRIPTION ·Low collector saturation voltage ·High DC current gain ·100% avalanche tested ·Minimum Lot-to-Lot varia

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SMD Type NPN Silicon Epitaxia 2SC3518-Z TO-252 +0.15 1.50 -0.15 Transistors Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 Features Low VCE(sat). +0.2 9.70

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DATA SHEET SILICON POWER TRANSISTOR 2SC3518-Z NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC3518-Z is designed for Audio Frequency Amplifier a

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DATA SHEET SILICON POWER TRANSISTOR 2SC3518-Z NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC3518-Z is designed for Audio Frequency Amplifier a

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