Silicon Epitaxial Planar Transistor FEATURES .
2SC4102 - Silicon Transistor
Silicon Epitaxial Planar Transistor FEATURES Excellent hFE linearity. Power dissipation:PCM=200mW Pb Lead-free Production specification 2SC4102.2SC4102 - High-voltage Amplifier Transistor
2SC4102 / 2SC3906K High-voltage Amplifier Transistor (120V, 50mA) Datasheet Parameter VCEO IC Value 120V 50mA lFeatures 1)High breakdown voltage. .2SC4102 - High-voltage Amplifier Transistor
SMD Type High-voltage Amplifier Transistor 2SC4102 Transistors Features High breakdown voltage.(VCEO = 120V) 1 Emitter 2 Base 3 Collector Absolute.2SC4102 - TRANSISTOR
2SC4102 TRANSISTOR (NPN) FEATURES High Breakdown Voltage Complements the 2SA1579 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO .