: 2SC503 2SC504 I SILICON NPN EPITAXIAL TYPE (PCT.
C5032 - 2SC5032
Power Transistors 2SC5032 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm s Features q High-speed.2SC5030 - NPN TRANSISTOR
2SC5030 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5030 Strobe Flash Applications Medium Power Amplifier Applications Unit: mm • • • High DC .2SC5037 - NPN TRANSISTOR
Power Transistors 2SC5037, 2SC5037A Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 4.6±0.2 φ3.2±0..C5030 - 2SC5030
2SC5030 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5030 Strobe Flash Applications Medium Power Amplifier Applications Unit: mm • • • High DC .2SC503 - Silicon NPN Epitaxial Type Transistor
: 2SC503 2SC504 I SILICON NPN EPITAXIAL TYPE (PCT PROCESS) HIGH FREQUENCY AMPLIFIER APPLICATIONS. HIGH SPEED SWITCHING APPLICATIONS. FEATURES • High.C5036 - 2SC5036
Power Transistors 2SC5036, 2SC5036A Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching s Features q High-speed.2SC5032 - NPN TRANSISTOR
Power Transistors 2SC5032 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 4.6±0.2 s Features q q q.2SC5034 - NPN Transistor
Power Transistors 2SC5034 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 4.6±0.2 s Features 9..2SC5035 - NPN TRANSISTOR
Power Transistors 2SC5035 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm s Features q q q q 4.6±.2SC5036 - NPN TRANSISTOR
Power Transistors 2SC5036, 2SC5036A Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 4.6±0.2 φ3.2±0..2SC5036A - NPN TRANSISTOR
Power Transistors 2SC5036, 2SC5036A Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 4.6±0.2 φ3.2±0..2SC5037A - NPN TRANSISTOR
Power Transistors 2SC5037, 2SC5037A Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 4.6±0.2 φ3.2±0..C503 - 2SC503
: 2SC503 2SC504 I SILICON NPN EPITAXIAL TYPE (PCT PROCESS) HIGH FREQUENCY AMPLIFIER APPLICATIONS. HIGH SPEED SWITCHING APPLICATIONS. FEATURES • High.