2SC503 Datasheet | Specifications & PDF Download

2SC5030 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5030 Strobe Flash Applications Medium Power Amplifier Applications Unit: mm • • • High DC

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: 2SC503 2SC504 I SILICON NPN EPITAXIAL TYPE (PCT PROCESS) HIGH FREQUENCY AMPLIFIER APPLICATIONS. HIGH SPEED SWITCHING APPLICATIONS. FEATURES • High

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Power Transistors 2SC5034 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 4.6±0.2 s Features 9.

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Power Transistors 2SC5032 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm s Features q High-speed

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: 2SC503 2SC504 I SILICON NPN EPITAXIAL TYPE (PCT PROCESS) HIGH FREQUENCY AMPLIFIER APPLICATIONS. HIGH SPEED SWITCHING APPLICATIONS. FEATURES • High

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2SC5030 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5030 Strobe Flash Applications Medium Power Amplifier Applications Unit: mm • • • High DC

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Power Transistors 2SC5032 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 4.6±0.2 s Features q q q

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Power Transistors 2SC5035 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm s Features q q q q 4.6±

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Power Transistors 2SC5036, 2SC5036A Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 4.6±0.2 φ3.2±0.

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Power Transistors 2SC5036, 2SC5036A Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 4.6±0.2 φ3.2±0.

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Power Transistors 2SC5036, 2SC5036A Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching s Features q High-speed

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Power Transistors 2SC5037, 2SC5037A Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 4.6±0.2 φ3.2±0.

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Power Transistors 2SC5037, 2SC5037A Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 4.6±0.2 φ3.2±0.

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