TOSHIBA Transistor Silicon NPN Triple Diffused Typ.
Toshiba Semiconductor
2SC5200 - NPN TRANSISTOR
TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5200 Power Amplifier Applications 2SC5200 Unit: mm • High breakdown voltage: VCEO = 230 V (mi.
STMicroelectronics
2SC5200 - NPN Transistor
2SC5200 High power NPN epitaxial planar bipolar transistor Preliminary data Features ■ High breakdown voltage VCEO = 230 V ■ Typical fT = 30 MHz t.
ON Semiconductor
2SC5200 - NPN Transistor
NPN Epitaxial Silicon Transistor FJL4315, 2SC5200 Features • High Current Capability: IC = 17 A • High Power Dissipation: 150 W • High Frequency: 30 .
UTC
2SC5200 - NPN EPITAXIAL SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD 2SC5200 NPN EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS FEATURES * Recommended for 100W High Fideli.
JILIN SINO
2SC5200B - Silicon NPN Transistor
NPN Silicon NPN Triple Diffused Transistor R 2SC5200B z z：VCEO=250V (min) z 2SA1943B z 100W z（RoHS） APPLICATIONS z Power Amplifier Application.
Fairchild Semiconductor
2SC5200 - NPN Epitaxial Silicon Transistor
2SC5200/FJL4315 NPN Epitaxial Silicon Transistor Applications • High-Fidelity Audio Output Amplifier • General Purpose Power Amplifier Features • High.
INCHANGE
2SC5200 - NPN Transistor
isc Silicon NPN Power Transistor 2SC5200 DESCRIPTION ·High Current Capability ·High Power Dissipation ·High Collector-Emitter Breakdown Voltage- : V.
Toshiba
2SC5200N - NPN Transistor
Bipolar Transistors Silicon NPN Triple-Diffused Type 2SC5200N 1. Applications • Power Amplifiers 2. Features (1) High collector voltage: VCEO = 230 V .
JILIN SINO
2SC5200A - Silicon NPN Transistor
NPN Silicon NPN Triple Diffused Transistor R 2SC5200A APPLICATIONS Power Amplifier Applications ：VCEO=230V (min) 2SA1943A 100W （Ro.
Thinki Semiconductor
2SC5200 - 150 Watt Silicon NPN Power Transistors
2SC5200 ® Pb Free Plating Product 2SC5200 Pb 150 Watt Silicon NPN Power Transistors DESCRIPTION ·With TO-3PL package ·Complement to type 2SA1943.
INCHANGE
2SC5200H - NPN Transistor
isc Silicon NPN Power Transistor DESCRIPTION ·High Current Capability ·High Power Dissipation ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= .
INCHANGE
2SC5200N - NPN Transistor
isc Silicon NPN Power Transistor DESCRIPTION ·High Current Capability ·High Power Dissipation ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= .