2SD110 Datasheet | Specifications & PDF Download

isc Silicon NPN Power Transistor DESCRIPTIONV ·High Power Dissipation- : PC= 100W@TC= 25℃ ·High Current Capability- : IC = 10A ·Minimum Lot-to-Lot va

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2SD1101 Silicon NPN Epitaxial REJ03G0775-0200 (Previous ADE-208-1142) Rev.2.00 Aug.10.2005 Application • Low frequency amplifier • Complementary pair

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SMD Type Silicon NPN Epitaxial 2SD1101 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors IC Unit: mm Features +0.1 2.4-0.1 Low Frequency amplifier. +0

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isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V (Min) ·Wide Area of Safe Operation ·High Power and

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2SD1101 Silicon NPN Epitaxial Application • Low frequency amplifier • Complementary pair with 2SB831 Outline MPAK 3 1 2 1. Emitter 2. Base 3. Coll

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