2SD114 Datasheet | Specifications & PDF Download

Ordering number:EN784E NPN Epitaxial Planar Silicon Transistor www.DataSheet4U.com 2SD1145 High-Current Driver Applications Applications · Relay dr

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: 2SD1148 T SILICON NPN TRIPLE DIFFUSED TYPE POWER AMPLIFIER APPLICATIONS. FEATURES . Complementary to 2SB863. . Recommend for 70W High Fidelity Aud

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isc Silicon NPN Power Transistor DESCRIPTION ·High DC Current Gain- : hFE= 25-100@IC= 7.5A ·Excellent Safe Operating Area ·Minimum Lot-to-Lot variati

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2SD1140 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Darlington power transistor) 2SD1140 Micro Motor Drive, Hammer Drive Application

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SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1148 www.datasheet4u.com DESCRIPTION ·With TO-3P(I) package ·Comple

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SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1148 www.datasheet4u.com DESCRIPTION ·With TO-3P(I) package ·Comple

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1143 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·Collector-Emitter Saturati

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Ordering number:EN784E NPN Epitaxial Planar Silicon Transistor www.DataSheet4U.com 2SD1145 High-Current Driver Applications Applications · Relay dr

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2SD1140 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Darlington power transistor) 2SD1140 Micro Motor Drive, Hammer Drive Application

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1142 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·Collector-Emitter Saturati

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isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V(Min) ·Good Linearity of hFE ·Complement to Type 2

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isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 300V(Min) ·High DC Current Gain : hFE= 50

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Transistor 2SD1149 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm +0.2 2.8 –0.3 s Features q q q q 0.65±0.15 1.5 –0.0

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