Sanyo Semiconductor Corporation
D1145 - 2SD1145
Ordering number:EN784E
NPN Epitaxial Planar Silicon Transistor
www.DataSheet4U.com
2SD1145
High-Current Driver Applications
Applications
· Relay dr
Rating:
1
★
(5 votes)
INCHANGE
2SD114 - NPN Transistor
isc Silicon NPN Power Transistor
DESCRIPTION ·High DC Current Gain-
: hFE= 25-100@IC= 7.5A ·Excellent Safe Operating Area ·Minimum Lot-to-Lot variati
Rating:
1
★
(5 votes)
Toshiba
2SD1148 - NPN Transistor
:
2SD1148
T
SILICON NPN TRIPLE DIFFUSED TYPE
POWER AMPLIFIER APPLICATIONS.
FEATURES . Complementary to 2SB863. . Recommend for 70W High Fidelity Aud
Rating:
1
★
(4 votes)
INCHANGE
2SD1143 - NPN Transistor
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SD1143
DESCRIPTION ·High Breakdown Voltage-
: VCBO= 1500V (Min) ·Collector-Emitter Saturati
Rating:
1
★
(4 votes)
Toshiba Semiconductor
2SD1140 - NPN TRANSISTOR
2SD1140
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Darlington power transistor)
2SD1140
Micro Motor Drive, Hammer Drive Application
Rating:
1
★
(3 votes)
Sanyo Semicon Device
2SD1145 - NPN TRANSISTOR
Ordering number:EN784E
NPN Epitaxial Planar Silicon Transistor
www.DataSheet4U.com
2SD1145
High-Current Driver Applications
Applications
· Relay dr
Rating:
1
★
(3 votes)
Toshiba Semiconductor
D1140 - 2SD1140
2SD1140
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Darlington power transistor)
2SD1140
Micro Motor Drive, Hammer Drive Application
Rating:
1
★
(3 votes)
SavantIC
D1148 - 2SD1148
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1148
www.datasheet4u.com
DESCRIPTION ·With TO-3P(I) package ·Comple
Rating:
1
★
(3 votes)
Panasonic Semiconductor
2SD1149 - NPN TRANSISTOR
Transistor
2SD1149
Silicon NPN epitaxial planer type
For low-frequency amplification
Unit: mm
+0.2
2.8 –0.3
s Features
q q q q
0.65±0.15
1.5 –0.0
Rating:
1
★
(2 votes)
SavantIC
2SD1148 - SILICON POWER TRANSISTOR
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1148
www.datasheet4u.com
DESCRIPTION ·With TO-3P(I) package ·Comple
Rating:
1
★
(2 votes)
Inchange Semiconductor
2SD1141 - Power Transistor
isc Silicon NPN Darlington Power Transistor
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 300V(Min) ·High DC Current Gain
: hFE= 50
Rating:
1
★
(1 votes)
INCHANGE
2SD1148 - NPN Transistor
isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 140V(Min) ·Good Linearity of hFE ·Complement to Type 2
Rating:
1
★
(1 votes)
INCHANGE
2SD1142 - NPN Transistor
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SD1142
DESCRIPTION ·High Breakdown Voltage-
: VCBO= 1500V (Min) ·Collector-Emitter Saturati
Rating:
1
★
(1 votes)