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2SD114 Datasheet | Specifications & PDF Download

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2SD114 NPN Transistor

isc Silicon NPN Power Transistor DESCRIPTION ·Hi.

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2SD114 - NPN Transistor

isc Silicon NPN Power Transistor DESCRIPTION ·High DC Current Gain- : hFE= 25-100@IC= 7.5A ·Excellent Safe Operating Area ·Minimum Lot-to-Lot variati
Rating: 1 (5 votes)
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2SD1148 - NPN Transistor

: 2SD1148 T SILICON NPN TRIPLE DIFFUSED TYPE POWER AMPLIFIER APPLICATIONS. FEATURES . Complementary to 2SB863. . Recommend for 70W High Fidelity Aud
Rating: 1 (4 votes)
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2SD1143 - NPN Transistor

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1143 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·Collector-Emitter Saturati
Rating: 1 (4 votes)
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D1140 - 2SD1140

2SD1140 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Darlington power transistor) 2SD1140 Micro Motor Drive, Hammer Drive Application
Rating: 1 (3 votes)
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D1148 - 2SD1148

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1148 www.datasheet4u.com DESCRIPTION ·With TO-3P(I) package ·Comple
Rating: 1 (3 votes)
INCHANGE Logo INCHANGE

2SD1148 - NPN Transistor

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V(Min) ·Good Linearity of hFE ·Complement to Type 2
Rating: 1 (1 votes)
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2SD1142 - NPN Transistor

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1142 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·Collector-Emitter Saturati
Rating: 1 (1 votes)

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