2SD2141 Datasheet | Specifications & PDF Download

Equivalent circuit C Built-in Avalanche Diode for Surge Absorbing Darlington 2SD2141 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(

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isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor 2SD2141 DESCRIPTION ·High DC Current Gain- : hFE = 1500(Min)@ IC= 3A ·Low Collect

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Built-in Avalanche Diode for Surge Absorbing Darlington Equivalent circuit C 2SD2141 B (1.5kΩ)(100Ω) E Silicon NPN Triple Diffused Planar Transistor

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