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Built-in Avalanche Diode for Surge Absorbing Darlington
Equivalent circuit C
2SD2141 B (1.5kΩ)(100Ω) E
Silicon NPN Triple Diffused Planar Transistor
Application : Ignitor, Driver for Solenoid and Motor, and General Purpose
sAbsolute maximum ratings (Ta=25°C)
Symbol
Ratings
Unit
VCBO
380±50
V
VCEO
380±50
V
VEBO
6
V
IC
6(Pulse10)
A
IB
1
A
PC
35(Tc=25°C)
W
Tj
150
°C
Tstg
–55 to +150
°C
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB
Conditions VCB=330V
VEB=6V IC=25mA VCE=2V, IC=3A IC=4A, IB=20mA VCE=12V, IE=–0.5A VCB=10V, f=1MHz
(Ta=25°C)
Ratings
Unit
10max
µA
20max
mA
330 to 430
V
1500min 1.5max 20typ 95typ
V MHz pF
External Dimensions FM20(TO220F)
10.1±0.2
4.2±0.2 2.8 c0.5
4.0±0.2
16.9±0.3 8.4±0.2
ø3.3±0.2 a b
3.
2SD2141 Datasheet
