2SD218 Datasheet | Specifications & PDF Download

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isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V (Min) ·Low Collector-Emitter Saturation Voltage-

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Transistor 2SD2184 Silicon NPN epitaxial planer type For low-frequency output amplification Complementary to 2SB1438 6.9±0.1 0.15 Unit: mm 1.05 2.5±

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Transistor 2SD2185 Silicon NPN epitaxial planer type For low-frequency output amplification Complementary to 2SB1440 Unit: mm s Features q q 4.5±0.

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SMD Type Silicon NPN Epitaxial Planar Type 2SD2185 Transistors Features Low collector-emitter saturation voltage VCE(sat). Mini Power type package,

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