Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V (Min) - Low Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V (Max.)@ IC= 7A - Minimum Lot-to-Lot variations for robust device performance and reliable operation.
| Part Number | Manufacturer | Description |
|---|---|---|
| 2SD2184 | Panasonic | Silicon NPN Transistor |
| 2SD2185 | Panasonic | Silicon NPN Transistor |
| 2SD217 | Unknown Manufacturer | NPN SILICON EPITAXIAL MESA TRANSISTOR |
| 2SD2185 | Kexin Semiconductor | Silicon NPN Transistor |
| 2SD2180 | Panasonic | Silicon NPN Transistor |
| 2SD2182 | Panasonic | NPN Transistor |
| 2SD2118 | Galaxy Microelectronics | Low Power Transistor |
| 2SD2198 | SANYO | PNP / NPN Epitaxial Planar Silicon Transistors |
| 2SD2137A | Panasonic | Power Transistors |
| 2SD2178 | Panasonic | Silicon NPN epitaxial planar type Transistor |
