2SD313 Datasheet | Specifications & PDF Download

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SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD313 www.datasheet4u.com DESCRIPTION ·With TO-220C package ·Compleme

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isc Silicon NPN Power Transistor 2SD313 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·Low Collector-Emitter Saturation Vol

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UNISONIC TECHNOLOGIES CO., LTD 2SD313 NPN EPITAXIAL PLANAR TRANSISTOR DESCRIPTION The UTC 2SD313 is designed for use in general purpose amplifier and

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2SD313 Rev.F Mar.-2016 DATA SHEET / Descriptions TO-220 NPN 。Silicon NPN transistor in a TO-220 Plastic Package. / Features 。 Low Current Low

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NPN Silicon Epitaxial Power Transistor P b Lead(Pb)-Free Features: * DC Current Gain hFE = 40-320 @IC = 1.0A * Low VCE(sat) ≤ 1.0V(MAX) @IC = 2.0A, I

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DC COMPONENTS CO., LTD. R DISCRETE SEMICONDUCTORS 2SD313 TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for gener

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